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Section 13 Bus State Controller (BSC)
SH7751 Group, SH7751R Group
Page 336 of 1128
R01UH0457EJ0301 Rev. 3.01
Sep 24, 2013
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DRAM control signal timing can be controlled by register settings
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Consecutive accesses to the same row address
Connectable area: 3
Settable bus widths: 32, 16
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Synchronous DRAM interface
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Row address/column address multiplexing according to synchronous DRAM capacity
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Burst operation
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Auto-refresh and self-refresh
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Synchronous DRAM control signal timing can be controlled by register settings
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Consecutive accesses to the same row address
Connectable areas: 2, 3
Settable bus widths: 32
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Burst ROM interface
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Wait state insertion can be controlled by program
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Burst operation, executing the number of transfers set in a register
Connectable areas: 0, 5, 6
Settable bus widths: 32, 16, 8
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MPX interface
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Address/data multiplexing
Connectable areas: 0 to 6
Settable bus widths: 32
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Byte control SRAM interface
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SRAM interface with byte control
Connectable areas: 1, 4
Settable bus widths: 32, 16
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PCMCIA interface
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Wait state insertion can be controlled by program
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Bus sizing function for I/O bus width
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Fine refreshing control
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Supports refresh operation immediately after self-refresh operation in low-power DRAM
by means of refresh counter overflow interrupt function
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Refresh counter can be used as interval timer
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Interrupt request generated by compare-match
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Interrupt request generated by refresh counter overflow