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Section 23 Electrical Characteristics
SH7751 Group, SH7751R Group
Page 1052 of 1128
R01UH0457EJ0301 Rev. 3.01
Sep 24, 2013
Tr1
Tr2
Trw
Tc1
Tcw
Tc2
Tc1
Tcnw
Tcw
Tc2
Tcw
CKIO
CSn
RD/
WR
RAS
CASn
BS
t
AD
c1
Row
c2
c8
t
AD
t
AD
t
RWD
t
RWD
t
RDH
t
RDS
d1
t
WDD
d1
d2
d8
t
BSD
t
BSD
t
WDD
d2
t
RDH
t
WDD
t
RDS
d8
t
WDD
t
CSD
t
CSD
t
DACD
t
DACD
t
DACD
t
CASD1
t
CASD1
t
CASD1
t
CASD1
t
CASD1
t
RASD
t
RASD
t
RASD
t
DACD
t
DACD
t
DACD
Tcw
Tc1
Tcnw
Tc2
Tc1
Tpc
Tc2
Tcnw
Tcw
Address
D31–D0
(read)
D31–D0
(write)
DACKn
(SA: IO
→
memory)
DACKn
(SA: IO
←
memory)
Le
g
end:
IO: DACK
device
SA: Sin
g
le address DMA transfer
DA:
Dual address DMA transfer
DACK set to active-hi
g
h
Figure 23.44 DRAM Burst Bus Cycle (Fast Page Mode, RCD [1:0] = 01, AnW [2:0] = 001,
TPC [2:0] = 001, 2-Cycle CAS Negate Pulse Width)