Section 23 Electrical Characteristics
SH7751 Group, SH7751R Group
Page 1046 of 1128
R01UH0457EJ0301 Rev. 3.01
Sep 24, 2013
Tr2
Tr1
Trw
Tc1
Tcw
Tc2
Tc1
Tc2
Tcw
Tc1
Tcw
Tc1
Tc2
Tce
Tpc
Tcw
Tc2
CKIO
t
AD
t
AD
t
AD
t
RDH
d1
t
RDS
t
RDH
d8
d7
t
RDS
BS
RAS
t
RASD
t
RASD
CSn
CASn
Row
c1
c2
c8
RD/
WR
t
CSD
t
CSD
t
CASD1
t
CASD1
t
CASD1
t
CASD1
t
RASD
t
CASD1
t
CASD1
t
BSD
t
BSD
t
DACD
t
DACD
t
DACD
t
RWD
t
RWD
Address
DACKn
(SA: IO
←
memory)
D31–D0
(read)
Le
g
end:
IO: DACK
device
SA: Sin
g
le address DMA transfer
DA:
Dual address DMA transfer
DACK set to active-hi
g
h
Figure 23.38 DRAM Burst Bus Cycle
(EDO Mode, RCD [1:0] = 01, AnW [2:0] = 001, TPC [2:0] = 001)