CHAPTER 16 FLASH MEMORY (
µµµµ
PD70F3116)
741
User’s Manual U14492EJ3V0UD
The self-programming interface is outlined below.
Figure 16-13. Outline of Self-Programming Interface
Application program
Entry program
RAM parameter
Device internal processing
Flash memory
Self-programming
interface
Flash-memory manipulation
16.7.4 Hardware environment
To write or erase the flash memory, a high voltage must be applied to the V
PP
pin. To execute self-programming, a
circuit that can generate a write voltage (V
PP
) and that can be controlled by software is necessary on the application
system. An example of a circuit that can select a voltage to be applied to the V
PP
pin by manipulating a port is shown
below.
Figure 16-14. Example of Self-Programming Circuit Configuration
V
DD
= 3.3 V
±
0.3 V
PD70F3116
V
DD5
, AV
DD
V
SS3
, V
SS5
, CV
SS
V
PP
Output port
IC for power supply
OUTPUT
INPUT
ON/OFF
V
SS
10 k
Ω
≥
10 k
Ω
V
IN
µ
V
PP
= 7.8 V
±
0.3 V
V
DD3
, CV
SS
V
DD
= 5.0 V
±
0.5 V
Содержание V850E/IA1 mPD703116
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