NXP Semiconductors MC9S08LG16, Reference Manual

Page: 64 / 373

Chapter 4 Memory
MC9S08LG32 MCU Series, Rev. 5
64 Freescale Semiconductor
The first byte of a series of sequential bytes being programmed in burst mode takes the same amount of
time to program as a byte programmed in standard mode. The subsequent bytes program in the burst
program time provided that the conditions above are met. In the case where the next sequential address is
the beginning of a new row, the program time for that byte is the standard time instead of the burst time.
This is because the high voltage to the array must be disabled and then enabled again. If a new burst
command has not been queued before the current command completes, then the charge pump is disabled
and the high voltage removed from the array.
Figure 4-3. Flash Burst Program Flowchart
1
0
FCBEF?
START
WRITE TO FLASH
TO BUFFER ADDRESS AND DATA
WRITE COMMAND (0x25) TO FCMD
NO
YES
FPVIO OR
WRITE 1 TO FCBEF
TO LAUNCH COMMAND
AND CLEAR FCBEF
(2)
NO
YES
NEW BURST COMMAND?
1
0
FCCF?
ERROR EXI
T
DONE
(2)
Wait at least four bus cycles before
1
0
FACCERR?
CLEAR ERROR
FACCERR?
(1)
Required only once after reset.
WRITE TO FCDIV
(1)
checking FCBEF or FCCF
.
FLASH BURST
PROGRAM FLOW