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AT32F435/437
Series Reference Manual
2022.11.11
Page 525
Rev 2.03
Figure 24-18
NOR/PSRAM synchronous multiplexed mode write access
XMC_A[25
:
16]
XMC_LB
XMC_UB
XMC_NE[x]
XMC_D[15
:
0]
High-Z
Memory address[25:16]
XMC_NADV
DTLAT+1
XMC_CLK
Don
t care
Address signals
Data signals
Chip select
signal
Memory address[15:0]
Address data
multiplex signal
XMC_NWE
XMC_NOE
High
Data1
from
XMC
XMC_NWAIT
Wait signal
Data2
from
XMC
Data3 from
XMC
Data4
from
XMC
XMC_CLK
Clock
24.4.3 NAND
NAND interface can be used to drive NAND Flash. It is divided into two storage banks: regular bank and
special bank, each with its separate timing registers. Both banks can be accessible with different timings.
24.4.4 Operating mode
Pin function:
Pin signals vary from external memory to external memory. Table 24-32 lists typical pin signals.
Table 24-32
T ypical pin signals for NAND Flash
XMC pin name
8-bit NAND Flash
16-bit NAND Flash
XMC_NCE[2]
Chip-select
Chip-select
XMC_A[17]
Address latch enable (ALE)
Address latch enable (ALE)
XMC_A[16]
Command latch enable (CLE)
Command latch enable (CLE)
XMC_NOE
Output enable (NRE)
Output enable (NRE)
XMC_NWE
Write enable
Write enable
XMC_D[15: 0]
Data bus
Do not use XMC_D[15: 8]
Use XMC_D[7: 0] as data bus.
XMC_NWAIT
Ready/Busy (R/B)
Ready/Busy (R/B)
Access address
The HADDR is only used to select memory banks. Refer to Table 24-5 for more information.
The user writes the command value in the command section, the destination address in the address
section, and reads or writes the data from or to the data section. As the access addresses are transmitted
through data bus, the HADDR is actually not associated with NAND Flash size, so theoretically the XMC
has no limitation on the NAND Flash capacity accessible.
Data access
In case that the AHB data width is not equal to that of the memories, the XMC will make appropriate
arrangement according to the typical signals of the external memories. Table 24-33 lists the operation