Renesas M32R/ECU Series, User Manual

Page: 150 / 839

6
6-21
INTERNAL MEMORY
32180 Group User’s Manual (Rev.1.0)
6.5 Programming the Internal Flash Memory
END
Read any address of the internal flash
memory (Note 3) to check for programming
error (see Figure 6.4.2)
Last address?
YES
NO
START
Write the program data to the internal flash
memory address to be programmed (Note 1)
Write the next program data to the
previously programmed a 2
Write the Page Program command
(H'4141) to any address of
the internal flash memory
Internal flash memory is programmed
by Page Program (Note 2)
Finished programming
one page?
NO
YES
Wait for 1 µs
(using a hardware or software timer)
FSTAT bit = 1
TIME OUT?
0.5s
YES
NO
Forcibly terminated
(see Figure 6.4.3.)
YES
NO
To next page
Note 1: Start programming from the beginning of a 256-byte boundary (lower address H'00).
Note 2: When a programming operation started, the internal flash memory is automatically readied to run the Read Status command,
so that there is no need to enter the Read Status command until another command is entered.
Note 3: Inspect the Flash Status Register 2 ERASE (erase status), WRERR1 (write status 1) and WRERR2 (write status 2) bits to check
for programming error.
Figure 6.5.8 Page Program Command
(2) Page Program command
The internal flash memory is programmed one page at a time, each page consisting of 256 bytes (lower
addresses H’00 to H’FF). To program the flash memory, write the Page Program command (H’4141) to any
address of the internal flash memory and then the program data to the address to be programmed.
The protected flash memory blocks cannot be accessed for write by the Page Program command.
Page programming is automatically performed by the internal control circuit, and whether the Page Program
command has finished can be known by checking the Flash Status Register 1 (FSTAT1) FSTAT bit. (See
Section 6.4.2, “Flash Status Registers.”) While the FSTAT bit = "0" (busy), the next programming (by the
Page Program command) cannot be performed.