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INTERNAL MEMORY
32180 Group User’s Manual (Rev.1.0)
6.5 Programming the Internal Flash Memory
START
Write the Read Status command
(H'7070) to any address of the
internal flash memory
Read any address of the
internal flash memory
END
Figure 6.5.12 Read Status Command
(7) Clear Status Register command
The Clear Status Register command clears the Flash Status Register 2 ERASE (erase status), WRERR1
(write status 1) and WRERR2 (write status 2) bits to "0". Write the Clear Status Register command (H’5050)
to any address of the internal flash memory, and Flash Status Register 2 is thereby initialized.
If an error occurs when programming or erasing the internal flash memory and the Flash Status Register 2
ERASE (erase status), WRERR1 (write status 1) or WRERR2 (write status 2) bit is set to "1", the next
programming or erase operation cannot be executed unless each status bit is cleared to "0".
START
Write the Clear Status Register command (H'5050)
to any address of the internal flash memory
END
Figure 6.5.13 Clear Status Register Command
(6) Read Status command
The Read Status command reads the content of Flash Status Register 2 (FSTAT2) that indicates whether
flash memory programming or erase operation has terminated normally. To read Flash Status Register 2,
write the Read Status command (H’7070) to any address of the internal flash memory. Next, read any ad-
dress of the internal flash memory, and Flash Status Register 2 (FSTAT2) will be read out.
Summary of Contents for M32R/ECU Series
Page 17: ...12 This page is blank for reasons of layout...
Page 712: ...CHAPTER 18 OSCILLATOR CIRCUIT 18 1 Oscillator Circuit 18 2 Clock Generator Circuit...
Page 794: ...CHAPTER 22 TYPICAL CHARACTERISTICS...
Page 796: ...APPENDIX 1 MECHANICAL SPECIFICAITONS Appendix 1 1 Dimensional Outline Drawing...
Page 798: ...APPENDIX 2 INSTRUCTION PROCESSING TIME Appendix 2 1 32180 Instruction Processing Time...
Page 802: ...APPENDIX 3 PROCESSING OF UNUSED PINS Appendix 3 1 Example Processing of Unused Pins...
