Renesas M32R/ECU Series, User Manual

Page: 153 / 839

6
6-24
INTERNAL MEMORY
32180 Group User’s Manual (Rev.1.0)
END
Read any address of the internal flash
memory (Note 2) to check for programming
error (see Figure 6.4.2)
START
Write the Verify command (H'D0D0) to
the last even address of the flash
memory block to be erased
Write the Block Erase command
(H'2020) to any address of the
internal flash memory
Internal flash memory contents
are erased by the Block Erase
command (Note 1)
Wait for 1 µs
(using a hardware or software timer)
FSTAT bit = 1
TIME OUT?
1s
YES
NO
Forcibly terminated
(see Figure 6.4.3.)
YES
NO
Note 1: When an erase operation started, the internal flash memory is automatically readied to run the Read Status command,
so that there is no need to enter the Read Status command until another command is entered.
Note 2: Inspect the Flash Status Register 2 ERASE (erase status), WRERR1 (write status 1) and WRERR2 (write status 2) bits
to check for programming error.
Figure 6.5.10 Block Erase Command
6.5 Programming the Internal Flash Memory
(4) Block Erase command
The Block Erase command erases the content of the internal flash memory one block at a time. To perform
this operation, write the Block Erase command (H’2020) to any address of the internal flash memory. Next,
write the Verify command (H’D0D0) to the last even address of the flash memory block to be erased (see
Table 6.5.3, “M32180F8 Target Blocks and Specified Addresses”).
The protected flash memory blocks cannot be erased by the Block Erase command.
Block erase operation is automatically performed by the internal control circuit, and whether the Block Erase
command has finished can be known by checking the Flash Status Register 1 (FSTAT1) FSTAT bit. (See
Section 6.4.2, “Flash Status Registers.”) While the FSTAT bit = "0" (busy), the next block erase operation (by
the Block Erase command) cannot be performed.