Memory Controller
MPC885 PowerQUICC Family Reference Manual, Rev. 2
Freescale Semiconductor
15-39
2
CST2
Chip-select timing 2. Defines the state of CS during clock phase 3.
0 Asserted at the rising edge of GCLK2_50.
1 Negated at the rising edge of GCLK2_50.
3
CST3
Chip-select timing3. Defines the state of CS during clock phase 4.
0 Asserted at the falling edge of GCLK1_50.
1 Negated at the falling edge of GCLK1_50.
4
BST4
Byte-select timing 4. Defines the state of BS during clock phase 1.
0 Asserted at the falling edge of GCLK2_50.
1 Negated at the falling edge of GCLK2_50.
The final value of the BS lines depends on the values of BRx[PS], the TSIZ lines, and A[30:31] for
the access. See
Section 15.6.4.3, “Byte-Select Signals (BSTx).”
5
BST1
Byte-select timing 1. Defines the state of BS during clock phase 2.
0 Asserted at the rising edge of GCLK1_50.
1 Negated at the rising edge of GCLK1_50.
The final value of the BS lines depends on the values of BRx[PS], the TSIZ lines, and A[30:31] for
the access. See
Section 15.6.4.3, “Byte-Select Signals (BSTx).”
6
BST2
Byte-select timing 2. Defines the state of BS during clock phase 3.
0 Asserted at the rising edge of GCLK2_50.
1 Negated at the rising edge of GCLK2_50
The final value of the BS lines depends on the values of BRx[PS], the TSIZ lines, and A[30:31] for
the access. See
Section 15.6.4.3, “Byte-Select Signals (BSTx).”
7
BST3
Byte-select timing 3. Defines the state of BS during clock phase 4.
0 Asserted at the falling edge of GCLK1_50.
1 Negated at the falling edge of GCLK1_50.
The final value of the BS lines depends on the values of BRx[PS], the TSIZ lines, and A[30:31] for
the access. See
Section 15.6.4.3, “Byte-Select Signals (BSTx).”
8–9
G0L
General-purpose line 0 lower. Defines the state of GPL0 during phases 1–3.
10 Asserted at the falling edge of GCLK2_50.
11 Negated at the falling edge of GCLK2_50.
00 Driven at the falling edge of GCLK2_50 with an address signal as defined in M
xMR[G0CLx].
10–11
G0H
General-purpose line 0 higher. Defines the state of GPL0 during phase 4.
10 Asserted at the falling edge of GCLK1_50.
11 Negated at the falling edge of GCLK1_50.
00 Driven at the falling edge of GCLK1_50 with an address signal as defined in M
xMR[G0CLx].
12
G1T4
General-purpose line 1 timing 4. Defines the state of GPL1 during phase 1–3.
0 Asserted at the falling edge of GCLK2_50.
1 Negated at the falling edge of GCLK2_50.
13
G1T3
General-purpose line 1 timing 3. Defines the state of GPL1 during phase 4.
0 Asserted at the falling edge of GCLK1_50.
1 Negated at the falling edge of GCLK1_50.
14
G2T4
General-purpose line 2 timing 4. Defines the state of GPL2 during phase 1–3.
0 Asserted at the falling edge of GCLK2_50.
1 Negated at the falling edge of GCLK2_50.
15
G2T3
General-purpose line 2 timing 3. Defines the state of GPL2 during phase 4.
0 Asserted at the falling edge of GCLK1_50.
1 Negated at the falling edge of GCLK1_50.
Table 15-14. RAM Word Bit Settings (continued)
Bit
Name
Description
Содержание PowerQUICC MPC870
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