Renesas ZTAT H8S/2357F, Hardware Manual

Page: 794 / 1047

Rev.6.00 Oct.28.2004 page 766 of 1016
REJ09B0138-0600H
Item Symbol Min Typ Max Unit
Test
Condition
Programming Wait time after PV bit clear *
1
η
4 — —
µ
s
Maximum programming
count
*
1
*
4
N — — 1000 *
5
Times z = 200
µ
s
Erase Wait time after SWE bit
setting
*
1
x 10 — —
µ
s
Wait time after ESU bit
setting
*
1
y 200 — —
µ
s
Wait time after E bit
setting
*
1
*
6
z 5 — 10 ms
Wait time after E bit clear *
1
α
10 — —
µ
s
Wait time after ESU bit
clear
*
1
β
10 — —
µ
s
Wait time after EV bit
setting
*
1
γ
20 — —
µ
s
Wait time after H’FF dummy
write
*
1
ε
2 — —
µ
s
Wait time after EV bit clear
*
1
η
5 — —
µ
s
Maximum erase count
*
1
*
6
N 120 — 240 Times
Notes: 1. Set the times according to the program/erase algorithms.
2. Programming time per 32 bytes (Shows the total time the flash memory control register 1 (FLMCR1) is set. It
does not include the programming verification time.)
3. Block erase time (Shows the period the E bit in FLMCR1 is set. It does not include the erase verification time.)
4. Maximum programming time
(t
p
(max)=wait time after P-bit setting (z)
×
maximum programming count (N))
5. Number of times when the wait time after P bit setting (z) = 200
µ
s.
The maximum number of writes (N) should be set according to the actual set value of z so as not to exceed the
maximum programming time (t
P
(max)).
6. For the maximum erase time (t
E
(max)), the following relationship applies between the wait time after E bit setting
(z) and the maximum number of erases (N):
t
E
(max) = Wait time after E bit setting (z)
×
maximum number of erases (N)
The values of z and N should be set so as to satisfy the above formula.
Examples: When z = 5 [ms], N = 240 times
When z = 10 [ms], N = 120 times
Table 22-43 shows the flash memory characteristics.
Table 22-43 Flash Memory Characteristics (2)
Conditions: V
CC
= 3.0 to 3.6 V, AV
CC
= 3.0 to 3.6 V, V
ref
= 3.0 V to AV
CC
, V
SS
=AV
SS
=0V
T
a
=0 to +75
°
C (Programming/erasing operating temperature, regular specifications), T
a
=0 to +85
°
C
(Programming/erasing operating temperature, wide-range specifications)
Item Symbol Min Typ Max Unit
Test
Condition
Programming time
*
1
*
2
*
4
t
P
— 10 200 ms/32 bytes
Erase time
*
1
*
3
*
5
t
E
— 100 1200 ms/block
Reprogramming count N
WEC
— — 100 Times