Rev.6.00 Oct.28.2004 page 619
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REJ09B0138-0600H
19.15
Overview of Flash Memory (H8S/2398 F-ZTAT)
19.15.1
Features
The H8S/2398 F-ZTAT have 256 kbytes of on-chip flash memory. The features of the flash memory are summarized
below.
•
Four flash memory operating modes
Program mode
Erase mode
Program-verify mode
Erase-verify mode
•
Programming/erase methods
The flash memory is programmed 128 bytes at a time. Erasing is performed by block erase (in single-block units). To
erase the entire flash memory, the individual blocks must be erased sequentially. Block erasing can be performed as
required on 4-kbyte, 32-kbyte, and 64-kbyte blocks.
•
Programming/erase times
The flash memory programming time is 10 ms (typ.) for simultaneous 128-byte programming, equivalent to 78
µ
s
(typ.) per byte, and the erase time is 50 ms (typ.).
•
Reprogramming capability
Depending on the product, the maximum number of times the flash memory can be reprogrammed is either 100 or
1,000.
Reprogrammable up to 100 times: HD64F2398TE, HD64F2398F
Reprogrammable up to 1,000 times: HD64F2398TET, HD64F2398FT
•
On-board programming modes
There are two modes in which flash memory can be programmed/erased/verified on-board:
Boot mode
User program mode
•
Automatic bit rate adjustment
With data transfer in boot mode, the bit rate of the chip can be automatically adjusted to match the transfer bit rate of
the host.
•
Flash memory emulation by RAM
Part of the RAM area can be overlapped onto flash memory, to emulate flash memory updates in real time.
•
Protect modes
There are three protect modes, hardware, software, and error protect, which allow protected status to be designated for
flash memory program/erase/verify operations.
•
Programmer mode
Flash memory can be programmed/erased in programmer mode, using a PROM programmer, as well as in on-board
programming mode.
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