Rev.6.00 Oct.28.2004 page 607
of 1016
REJ09B0138-0600H
CE
Address
Data
H'00
OE
WE
Command write
t
wep
t
ceh
t
dh
t
ds
t
f
t
r
t
nxtc
Note: Data is latched on the rising edge of WE.
t
ces
Memory read mode
Address stable
Data
Figure 19-25 Memory Read Mode Timing Waveforms after Command Write
Table 19-22 AC Characteristics when Entering Another Mode from Memory Read Mode
Conditions: V
CC
= 5.0 V
±
10%, V
SS
= 0 V, T
a
= 25
°
C
±
5
°
C
Item
Symbol
Min
Max
Unit
Command write cycle
t
nxtc
20
—
µ
s
CE
hold time
t
ceh
0
—
ns
CE
setup time
t
ces
0
—
ns
Data hold time
t
dh
50
—
ns
Data setup time
t
ds
50
—
ns
Write pulse width
t
wep
70
—
ns
WE
rise time
t
r
—
30
ns
WE
fall time
t
f
—
30
ns
Summary of Contents for ZTAT H8S/2357F
Page 4: ......
Page 28: ...Rev 6 00 Oct 28 2004 page xxiv of xxiv REJ09B0138 0600H...
Page 82: ...Rev 6 00 Oct 28 2004 page 54 of 1016 REJ09B0138 0600H...
Page 108: ...Rev 6 00 Oct 28 2004 page 80 of 1016 REJ09B0138 0600H...
Page 364: ...Rev 6 00 Oct 28 2004 page 336 of 1016 REJ09B0138 0600H...
Page 438: ...Rev 6 00 Oct 28 2004 page 410 of 1016 REJ09B0138 0600H...
Page 566: ...Rev 6 00 Oct 28 2004 page 538 of 1016 REJ09B0138 0600H...
Page 588: ...Rev 6 00 Oct 28 2004 page 560 of 1016 REJ09B0138 0600H...
Page 688: ...Rev 6 00 Oct 28 2004 page 660 of 1016 REJ09B0138 0600H...
Page 694: ...Rev 6 00 Oct 28 2004 page 666 of 1016 REJ09B0138 0600H...
Page 708: ...Rev 6 00 Oct 28 2004 page 680 of 1016 REJ09B0138 0600H...
Page 1044: ...Rev 6 00 Oct 28 2004 page 1016 of 1016 REJ09B0138 0600H...