Renesas ZTAT H8S/2357F, Hardware Manual

Page: 754 / 1047

Rev.6.00 Oct.28.2004 page 726 of 1016
REJ09B0138-0600H
Table 22-22 Flash Memory Characteristics (HD64F2398F20T, HD64F2398TE20T)
Conditions: V
CC
= 5.0 V
±
10%, AV
CC
= 5.0 V
±
10%, V
ref
= 4.5 V to AV
CC
, V
SS
= AV
SS
= 0V
T
a
= 0 to +75
°
C (Programming/erasing operating temperature, regular specifications), T
a
= 0 to + 85
°
C
(Programming/erasing operating temperature, wide-range specifications)
Item Symbol Min Typ Max Unit
Test
Condition
Programming time *
1
*
2
*
4
t
P
— 10 200 ms/128
bytes
Erase time
*
1
*
3
*
6
t
E
— 50 1000 ms/block
Reprogramming count N
WEC
— — 1000 Times
Programming Wait time after SWE bit setting
*
1
x 1 — —
µ
s
Wait time after PSU bit setting
*
1
y 50 — —
µ
s
Wait time after P bit setting
*
1
*
4
z (z1) — — 30
µ
s1
≤
n
≤
6
(z2) — — 200
µ
s
7
≤
n
≤
1000
(z3) — — 10
µ
s Additional
program-
ming wait
Wait time after P bit clear
*
1
α
5 — —
µ
s
Wait time after PSU bit clear
*
1
β
5 — —
µ
s
Wait time after PV bit setting
*
1
γ
4 — —
µ
s
Wait time after H'FF dummy
write
*
1
ε
2 — —
µ
s
Wait time after PV bit clear *
1
η
2 — —
µ
s
Wait time after SWE bit clear *
1
θ
100 — —
µ
s
Maximum programming
count
*
1
*
4
N — — 1000 *
5
Times
Erase Wait time after SWE bit
setting
*
1
x 1 — —
µ
s
Wait time after ESU bit
setting
*
1
y 100 — —
µ
s
Wait time after E bit setting
*
1
*
6
z — — 10 ms Erase time
wait
Wait time after E bit clear *
1
α
10 — —
µ
s
Wait time after ESU bit clear *
1
β
10 — —
µ
s
Wait time after EV bit setting *
1
γ
20 — —
µ
s
Wait time after H’FF dummy
write
*
1
ε
2 — —
µ
s
Wait time after EV bit clear
*
1
η
4 — —
µ
s
Wait time after SWE bit clear
*
1
θ
100 — —
µ
s
Maximum erase count
*
1
*
6
N — — 100 Times
Notes: 1. Settings of each time must comply with algorithm of writing/erasing.
2. Writing time for 128 bytes: indicates the total period in which bit P of flash memory control register 1 (FLMCR1)
is set. Writing verification time is not included.
3. Erasing time for one block: indicates the period in which bit E of FLMCR1 is set. Erasing verification time is not
included.
4. Maximum writing time: t
P
(max) =
Σ
wait time (z) after setting of bit P