449
15.5.6
Differences from H8/3039 F-ZTAT Series
Table 15-5 Comparison of H8/3039F and H8/3022F
H8/3039F
H8/3022F
Size
128 kbytes
256 kbytes
Program/erase voltage
Supplied from V
CC
Supplied from V
CC
Programming
Programming
unit
32-byte simultaneous
programming
128-byte simultaneous
programming
Write pulse
application
method
150
µ
s
×
4 + 500
µ
s
×
399
30
µ
s
×
6 + 200
µ
s
×
994
(with 10
µ
s additional
programming)
*
1
Erasing
Block
configuration
8 blocks
1 kbyte
×
4, 28 kbytes
×
1,
32 kbytes
×
3
12 blocks
4 kbytes
×
8, 32 kbytes
×
1,
64 kbytes
×
3
EBR
configuration
EBR: H'FF42
7
EB7
6
EB6
5
EB5
4
EB4
3
EB3
2
EB2
1
EB1
0
EB0
EBR1: H'FF42
7
EB7
6
EB6
5
EB5
4
EB4
3
EB3
2
EB2
1
EB1
0
EB0
EBR2: H'FF43
7
—
6
—
5
—
4
—
3
EB11
2
EB10
1
EB9
0
EB8
RAM
emulation
RAM area
1 kbyte
(H'FF800 to H'FFBFF)
4 kbytes
(H'FE000 to H'FEFFF)
Applicable
blocks
EB0 to EB3
EB0 to EB7
RAMCR
configuration
RAMCR: H'FF47
7
—
6
—
5
—
4
—
3
RAMS
2
RAM2
1
RAM1
0
—
RAMER: H'FF47
7
—
6
—
5
—
4
—
3
RAMS
2
RAM2
1
RAM1
0
RAM0
Flash error
FLER bit
FLMSR: H'FF4D
7
FLER
6
—
5
—
4
—
3
—
2
—
1
—
0
—
FLMCR2: H'FF41
7
FLER
6
—
5
—
4
—
3
—
2
—
1
—
0
—
Flash memory
characteristics
Wait after SWE
clearing
—
t
CSWE
specification must be
met
*
2
Boot mode
Bit rate
9,600 bps, 4,800 bps
19,200 bps, 9,600 bps,
4,800 bps
Boot area
H'FEF10 to H'FF2FF
H'FFDF10 to H'FFE70F
User area
H'FF300 to H'FFF0F
H'FFE710 to H'FFFF0F