RX610 Group
26. ROM (Flash Memory for Code Storage)
R01UH0032EJ0120 Rev.1.20
Page 843 of 1006
Feb 20, 2013
8 Kbytes
×
8 blocks
64 Kbytes
×
9 blocks
128 Kbytes
×
11 blocks
Address FFE0 0000h
Address FFFE FFFFh
Address FFF5 FFFFh
Address FFF6 0000h
EB00
EB07
EB16
EB08
Address FFFF FFFFh
User mat
to
EB27
EB17
Erasure block
to
to
Address FFFF 0000h
Note:
*
The erasure blocks differ in each product.
Product Code
Address
Number of 128-Kbyte Erasure Blocks
Erasure Blocks
R5F56108
FFE0 0000h
11
EB17 to EB27
R5F56107
FFE8 0000h
7
EB17 to EB23
R5F56106
FFF0 0000h
3
EB17 to EB19
R5F56104
FFF4 0000h
1
EB17
*
Figure 26.3 Configuration of Erasure Blocks for the User Mat
26.5
Operating Modes Associated with the ROM
Figure 26.4 is a diagram of the operating-mode transitions for the RX610 Group.
On release from the reset state, transitions are in accord with the levels on the MD0 and MD1 pins, as shown in figure
26.4.
For more information on the connections between the settings of the levels on the MD0 and MD1 pins and the operating
mode for the RX610 Group, refer to section 3, Operating Modes.