RX610 Group
26. ROM (Flash Memory for Code Storage)
R01UH0032EJ0120 Rev.1.20
Page 866 of 1006
Feb 20, 2013
Note:
*
tSEED: Suspend delay time
tRESW2: Reset pulse width during programming/erasure (see section 29, Electrical Characteristics)
tE128K: Erasure time for a 128-Kbyte erasure block (see section 29, Electrical Characteristics)
Error bit check
FRDY bit check
Error bit check
FRDY bit check
Write B0h to ROM programming/
erasure address in byte access
ERSSPD bit and PRGSPD bit
check
Timeout
(tSEED
×
1.1)
*
FCU initialization
FRESETR.FRESET = 1
writing
Wait
(tRESW2)
*
FRESETR.FRESET = 0
writing
No
Yes
FCUERR bit check
Timeout
(tE128K)
*
FRDY bit check
ILGLERR bit check
10h
Issue a status register
clear command
Read FASTAT
Write 10h to FASTAT
No
Yes
LGLERR, ERSERR,
PRGERR, FCUERR = 1
FCUERR = 0
ILGLERR = 0
ERSERR = 0
PRGERR = 0
FCUERR = 0
ILGLERR = 0
ERSERR = 0
PRGERR = 0
FCUERR = 0
LGLERR, ERSERR,
PRGERR, FCUERR = 1
FCUERR = 1
Start
End
"1"
"0"
"1"
"0"
SUSRDY bit check
"1"
"0"
"1"
"0"
"1"
"0"
Figure 26.19 Procedure for Programming/Erasure Suspension