RX610 Group
26. ROM (Flash Memory for Code Storage)
R01UH0032EJ0120 Rev.1.20
Page 849 of 1006
Feb 20, 2013
Table 26.8 FCU Command Formats
Command
N
u
m
b
er
o
f
b
u
s c
ycl
es
First
Cycle
Second
Cycle
Third
Cycle
4th to 5th
Cycles
6th
Cycle
7th to 130th
Cycles
131st
Cycle
A
d
d
re
s
s
D
a
ta
A
d
d
re
s
s
Da
ta
A
d
d
re
s
s
D
a
ta
A
d
d
re
s
s
D
a
ta
A
d
d
re
s
s
D
a
ta
A
d
d
re
s
s
D
a
ta
A
d
d
re
s
s
D
a
ta
P/E normal mode transition
1
RA
FFh
Status read mode transition
1
RA
70h
Lock bit read mode transi ion
(lock bit read 1)
1
RA
71h
Peripheral clock notification
6
RA
E9h
RA
03h
RA
0F0Fh
RA
0F0Fh
RA
D0h
Programming
131
RA
E8h
RA
80h
WA
WDn
RA
WDn
RA
WDn
RA
WDn
RA
D0h
Block erasure
2
RA
20h
BA
D0h
P/E suspension
1
RA
B0h
P/E resump ion
1
RA
D0h
Status register clearing
1
RA
50h
Lock bit read 2
2
RA
71h
BA
D0h
Lock bit programming
2
RA
77h
BA
D0h
[Legend] Address column RA: ROM programming/erasure address
When the FENTRY0 bit in FENTRYR is 1: An address from 00F0 0000h to 00FF FFFFh
When the FENTRY1
*
bit in FENTRYR is 1: An address from 00E0 0000h to 00EF FFFFh
WA: ROM programming-destination address
Start address for programming of 256 bytes of data
BA: ROM erasure block address
An address within the target erasure block (specified as an address in the range for programming and
erasure)
Data column WDn: nth word of data for programming (n = 1 to 128)
Note:
*
Cannot be used in a product whose ROM size is equal to or smaller than 1 Mbyte.