XC886/888CLM
Flash Memory
User’s Manual
4-19
V1.3, 2010-02
Flash Memory, V 1.0
•
For the specified cycling time
1)
, each aborted erase constitutes one program/erase
cycling.
•
Maximum allowable number of aborted erase for each D-Flash sector during lifetime
is 2500.
The Flash erase abort subroutine call (see
) cannot be performed anytime
within 5 ms after the erase operation has started. This is a strict requirement that must
be ensured by the user. Otherwise, the erase operation cannot be aborted. A successful
abort action is indicated by a Flash NMI event; bit FNMIFLASH in register NMISR is set,
and if enabled via NMICON.NMIFLASH, an NMI to the CPU is triggered to enter the
Flash NMI service routine (see
). At this point, all Flash banks are in ready-to-
read mode.
1) Refer to XC886/888 Data Sheet for Flash data profile
Table 4-3
Flash Erase Abort Subroutine
Subroutine
DFF3
H
: FLASH_ERASE_ABORT
Input
P-Flash bank(s) or D-Flash bank is/are in erase mode
Flash NMI (NMICON.NMIFLASH) is enabled (1) or disabled (0)
Output
PSW.CY:
0 = Flash erase abort is in progress
1 = Flash erase abort is not started
Stack size required
3 bytes
Resource
used/destroyed
ACC, PSW
*
Содержание XC886CLM
Страница 1: ...User s Manual V1 3 2010 02 Microcontrollers 8 Bit XC886 888CLM 8 Bit Single Chip Microcontroller...
Страница 3: ...User s Manual V1 3 2010 02 Microcontrollers 8 Bit XC886 888CLM 8 Bit Single Chip Microcontroller...
Страница 324: ...XC886 888CLM Serial Interfaces User s Manual 12 52 V1 3 2010 02 Serial Interfaces V 1 0...
Страница 663: ...w w w i n f i n e o n c o m Published by Infineon Technologies AG...