Renesas H8/38024 Series, Hardware Manual

Page: 499 / 661

Rev. 6.00, 08/04, page 469 of 628
16.4.6 Flash Memory Characteristics
Table 16.13 lists the flash memory characteristics.
Table 16.13 Flash Memory Characteristics
AV
CC
= 2.7 V to 3.6 V, V
SS
= AV
SS
= 0.0 V, V
CC
= 2.7 V to 3.6 V (operating voltage range in
reading), V
CC
= 3.0 V to 3.6 V (operating voltage range in programming/erasing), T
a
= –20 to
+75°C (operating temperature range in programming/erasing)
Values
Item Symbol Min Typ Max Unit
Test
Condition
Programming time (per 128 bytes)
* 1
*
2
*
4
t
P
— 7 200 ms
Erase time (per block) *
1
*
3
*
6
t
E
— 100 1200 ms
Maximum number of reprogrammings N
WEC
1000
* 8 * 11
10000
* 9
— Times
100
* 8 * 12
10000
* 9
—
Data retention time t
DRP
10
* 10
— — Years
Programming Wait time after SWE bit setting
* 1
x 1 — — µs
Wait time after PSU bit setting
* 1
y 50 — — µs
Wait time after P bit setting
* 1 * 4
z1 28 30 32 µs 1
≤
n
≤
6
z2 198 200 202 µs 7
≤
n
≤
1000
z3 8 10 12 µs Additional-
programming
Wait time after P bit clear
* 1
α
5 — — µs
Wait time after PSU bit clear
* 1
β
5 — — µs
Wait time after PV bit setting
* 1
γ
4 — — µs
Wait time after dummy write
*
1 ε
2 — — µs
Wait time after PV bit clear
*
1 η
2 — — µs
Wait time after SWE bit clear
* 1
θ
100 — — µs
Maximum programming count
* 1 * 4
* 5
N — — 1000 Times
Erase Wait time after SWE bit setting
* 1
x 1 — — µs
Wait time after ESU bit setting
* 1
y 100 — — µs
Wait time after E bit setting
* 1
*
6
z 10 — 100 ms
Wait time after E bit clear
* 1
α
10 — — µs
Wait time after ESU bit clear
* 1
β
10 — — µs
Wait time after EV bit setting
* 1 γ
20 — — µs
Wait time after dummy write
* 1 ε
2 — — µs
Wait time after EV bit clear
* 1
η
4 — — µs
Wait time after SWE bit clear
* 1
θ
100 — — µs
Maximum erase count
* 1
*
6
*
7
N — — 120 Times