Renesas H8/38024 Series, Hardware Manual

Page: 186 / 661

Rev. 6.00, 08/04, page 156 of 628
6.6 Descriptions of Registers of the Flash Memory
6.6.1 Flash Memory Control Register 1 (FLMCR1)
Bit 7 6 5 4 3 2 1 0
— SWE ESU PSU EV PV E P
Initial value 0 0 0 0 0 0 0 0
Read/Write — R/W R/W R/W R/W R/W R/W R/W
FLMCR1 is a register that makes the flash memory change to program mode, program-verify
mode, erase mode, or erase-verify mode. For details on register setting, refer to section 6.8, Flash
Memory Programming/Erasing. By setting this register, the flash memory enters program mode,
erase mode, program-verify mode, or erase-verify mode. Read the data in the state that bits 6 to 0
of this register are cleared when using flash memory as normal built-in ROM.
Bit 7—Reserved
This bit is always read as 0 and cannot be modified.
Bit 6—Software Write Enable (SWE)
This bit is to set enabling/disabling of programming/enabling of flash memory (set when bits 5 to
0 and the EBR register are to be set).
Bit 6
SWE
Description
0 Programming/erasing is disabled. Other FLMCR1 register bits and all EBR bits
cannot be set.
(initial value)
1 Flash memory programming/erasing is enabled.
Bit 5—Erase Setup (ESU)
This bit is to prepare for changing to erase mode. Set this bit to 1 before setting the E bit to 1 in
FLMCR1 (do not set SWE, PSU, EV, PV, E, and P bits at the same time).
Bit 5
ESU
Description
0 The erase setup state is cancelled (initial value)
1 The flash memory changes to the erase setup state. Set this bit to 1 before setting
the E bit to 1 in FLMCR1.