Rev. 6.00, 08/04, page 180 of 628
6.10.5
Auto-Erase Mode
1. Auto-erase mode supports only entire memory erasing.
2. Do not perform a command write during auto-erasing.
3. Confirm normal end of auto-erasing by checking I/O6. Alternatively, status read mode can also
be used for this purpose (I/O7 status polling uses the auto-erase operation end decision pin).
4. Status polling I/O6 and I/O7 pin information is retained until the next command write. As long
as the next command write has not been performed, reading is possible by enabling
CE
and
OE
.
5. Table 6.18 shows the AC characteristics.
Table 6.18
AC Characteristics in Auto-Erase Mode
Conditions: V
CC
= 3.3 V ±0.3 V, V
SS
= 0 V, T
a
= 25°C ±5°C
Item
Symbol
Min
Max
Unit
Notes
Command write cycle
t
nxtc
20
—
µs
Figure 6.18
CE
hold time
t
ceh
0
—
ns
CE
setup time
t
ces
0
—
ns
Data hold time
t
dh
50
—
ns
Data setup time
t
ds
50
—
ns
Write pulse width
t
wep
70
—
ns
Status polling start time
t
ests
1
—
ms
Status polling access time
t
spa
—
150
ns
Memory erase time
t
erase
100
40000
ms
WE
rise time
t
r
—
30
ns
WE
fall time
t
f
—
30
ns
Summary of Contents for H8/38024 Series
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