23-9
Seiko Epson Corporation
S1C31D50 TECHNICAL MANUAL
(Rev. 1.00)
23.6.
Flash Memory Characteristics
Unless otherwise specified: V
DD
= 2.4 to 5.5 V, V
SS
= 0 V, Ta = -40 to 85 °C
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Programming count
*1
C
FEP
Programmed data is guaranteed to be retained
for 10 years.
1,000
–
–
times
*1 Assumed that E Programming as count of 1. The count includes programming in the factory for shipment with ROM data
programmed.
23.7.
Input/Output Port (PPORT) Characteristics
Unless otherwise specified: V
DD
= 1.8 to 5.5 V, V
SS
= 0 V, Ta = -40 to 85 °C
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
High level Schmitt input
threshold voltage
VT+
0.5 × VDD
–
0.8 × VDD
V
Low level Schmitt input
threshold voltage
VT-
0.2 × VDD
–
0.5 × VDD
V
Schmitt input hysteresis voltage
DVT
180
–
–
mV
High level output current
IOH
VOH = 0.9 × VDD
–
–
-0.5
mA
Low level output current
IOL
VOL = 0.1 × VDD
0.5
–
–
mA
Leakage current
ILEAK
-150
–
150
nA
Input pull-up resistance
RINU
100
200
500
K
Ω
Input pull-down resistance
RIND
100
200
500
K
Ω
Pin capacitance
CIN
–
–
15
pF
High level
V
T+
V
T-
Low level
Inp
ut
d
at
a
V
DD
Summary of Contents for S1C31D50
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Page 463: ...25 3 Seiko Epson Corporation S1C31D50 TECHNICAL MANUAL Rev 1 00 TQFP14 80PIN ...
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