Seiko Epson Corporation
S1C31D50 TECHNICAL MANUAL
(Rev. 1.00)
23-8
OSC3 oscillator circuit characteristics
Unless otherwise specified: VDD = 1.8 to 5.5 V, VSS = 0 V, Ta = 25 °C
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Oscillation start time
t
sta3
Crystal resonator
–
–
20
ms
Ceramic resonator
–
–
1
ms
Internal gate capacitance
C
GI3
–
5
–
pF
Internal drain capacitance
C
DI3
–
5
–
pF
OSC3 CR oscillator characteristics
Unless otherwise specified: VDD = 1.8 to 5.5 V, VSS = 0 V, Ta = 25 °C
Item
Symbol
Condition Ta
Ta
Min.
Typ.
Max.
Unit
Internal oscillator
oscillation start time
t
staI
CLGOSC3.OSC3MD bit = 0
–
–
3
µs
Oscillation frequency
f
OSC3
CLGOSC3.OSC3FQ[1:0] bits = 0x3
0 to 50
℃
15.68
16
16.32
MHz
CLGOSC3.OSC3FQ[1:0] bits = 0x3
-20 to 60
℃
15.60
16
16.40
MHz
CLGOSC3.OSC3FQ[1:0] bits = 0x3
-40 to 85
℃
15.44
16
16.56
MHz
CLGOSC3.OSC3FQ[1:0] bits = 0x1
-40 to 85
℃
7.7
8.3
8.9
MHz
CLGOSC3.OSC3FQ[1:0] bits = 0x0
-40 to 85
℃
3.8
4.2
4.6
MHz
CLGOSC3.OSC3FQ[1:0] bits = 0x3
Right after auto trimming
-
15.84
16
16.16
MHz
OSC3 oscillation frequency-temperature characteristic
EXOSC external clock input characteristics
Unless otherwise specified: V
DD
= 1.8 to 5.5 V, V
SS
= 0 V, Ta = -40 to 85 °C
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
EXOSC external clock duty ratio
t
EXOSCD
t
EXOSCD
= t
EXOSCH
/t
EXOSC
46
–
54
%
High level Schmitt input threshold voltage
V
T+
0.5 × V
DD
–
0.8 × V
DD
V
Low level Schmitt input threshold voltage
V
T-
0.2 × V
DD
–
0.5 × V
DD
V
Schmitt input hysteresis voltage
DV
T
180
–
–
mV
EXOS
C
V
T+
V
T-
V
T+
t
EXOSCH
t
EXOSC =
1/f
V
T+
V
T-
V
T+
t
EXOSC
H
t
EXOSC =
1/f
Summary of Contents for S1C31D50
Page 461: ...25 1 Seiko Epson Corporation S1C31D50 TECHNICAL MANUAL Rev 1 00 25 Package TQFP12 48PIN ...
Page 462: ...25 2 Seiko Epson Corporation S1C31D50 TECHNICAL MANUAL Rev 1 00 QFP13 64PIN ...
Page 463: ...25 3 Seiko Epson Corporation S1C31D50 TECHNICAL MANUAL Rev 1 00 TQFP14 80PIN ...
Page 464: ...25 4 Seiko Epson Corporation S1C31D50 TECHNICAL MANUAL Rev 1 00 QFP15 100PIN ...