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PRELIMINARY
S3C6400X RISC MICROPROCESSOR
ELECTRICAL DATA
41-21
Preliminary product information describe products that are in development,
for which full characterization data and associated errata are not yet available.
Specifications and information herein are subject to change without notice.
Table 41-11. Memory Interface Timing Constants (SDRAM)
(VDDINT= 1.0V
±
0.05V, TA = -40 to 85
°
C, VDDM1 = 2.5V
±
0.25V, 1.8V
±
0.15V)
Parameter Symbol
Min
Max
Unit
SDRAM Address Delay
t
SAD
1.58 5.61 ns
SDRAM Chip Select Delay
t
SCSD
1.98 5.27 ns
SDRAM Row active Delay
t
SRD
1.88 4.67 ns
SDRAM Column active Delay
t
SCD
1.63 3.96 ns
SDRAM Byte Enable Delay
t
SBED
1.80 4.58 ns
SDRAM Write enable Delay
t
SWD
2.13 5.51 ns
SDRAM read Data Setup time
t
SDS
3.00 - ns
SDRAM read Data Hold time
t
SDH
1.50 - ns
SDRAM output Data Delay
t
SDD
1.59 5.65 ns
SDRAM Clock Enable Delay
t
CKED
1.62 4.11 ns
SDRAM Access time from Clock
t
AC
- 6.00 ns