ML620Q503/Q504 User's Manual
Chapter 27
Flash Memory Control
FEUL620Q504 27-
9
27.3 Description of Operation
The following functions are executable by the flash memory control registers.
1)
Data flash rewriting
2)
Program code rewriting
When rewriting program code
If use of the self-rewrite function, it is necessary to prepare for the program in advance for self-rewrite on a program
code area except the addresses targeted for block/sector erase or 1-word write.
The self-rewrite function includes the block erase function that erases by 4 Kwords (8 Kbytes), the sector erase function
that erases by 512 words (1 Kbyte), and the 1-word write function that writes by 1 word (2 bytes).
The rewrite count of the flash memory depends on the address as shown in the table below.
Product name
Rewrite address
Rewrite count
ML620Q503
0:0000h to 0:7FFFh
*1
100
7:0000h to 7:07FFh
10000
ML620Q504
0:0000h to 0:FFFFh
*2
100
7:0000h to 7:07FFh
10000
Parameter
Specifications
Sector erase time
(Max.) 100ms
Block erase time
(Max.) 100ms
1-word (2 bytes) write
(Max.) 40
µ
s
[Note]
*1: ML620Q503 : The test data area (0:7C00h to 0:7FFFh) is excluded.
*2: ML620Q504 : The test data area (0:FC00h to 0:FFFFh) is excluded.
It also includes the flash self register and flash rewrite acceptor function that restrict the self-rewrite operation, to
prevent an improper rewriting of the flash memory. When "0FAH" and "0F5H" are written to the flash acceptor
(FLASHACP) in this order after the self-rewrite function is enabled in the flash self register, the block/sector erase or
1-word write is enabled only once.
Notes:
• System clock for writing/erasing the flash
Flash write/erase cannot be performed at the low-speed system clock.
At the low-speed system clock, the write/erase command is disabled.
Make a selection the high-speed system clock as the CPU clock, and the frequency should be controlled in the range
from 384kHz to 16MHz.
• Debugging of the flash rewrite program
When debugging the flash rewrite program by using uEASE, etc., do not use breaks or the step run in the flash rewrite
sequence "from write to the flash acceptor to write to the flash data register". Otherwise, rewrite may fail.
Содержание LAPIS SEMICONDUCTOR ML620Q503
Страница 2: ...ML620Q503 Q504 User s Manual Issue Date Apr 16 2015 FEUL620Q504 01...
Страница 18: ...Chapter 1 Overview...
Страница 32: ...Chapter 2 CPU and Memory Space...
Страница 44: ...Chapter 3 Reset Function...
Страница 50: ...Chapter 4 Power Management...
Страница 70: ...Chapter 5 Interrupts...
Страница 134: ...Chapter 6 Clock Generation Circuit...
Страница 161: ...Chapter 7 Time Base Counter...
Страница 170: ...Chapter 8 Timers...
Страница 183: ...Chapter 9 Function Timer FTM...
Страница 231: ...Chapter 10 Watchdog Timer...
Страница 239: ...Chapter 11 Synchronous Serial Port SSIO...
Страница 251: ...Chapter 12 Synchronous Serial Port with FIFO SSIOF...
Страница 283: ...Chapter 13 UART...
Страница 303: ...Chapter 14 UART with FIFO UARTF...
Страница 327: ...Chapter 15 I2 C Bus Interface...
Страница 344: ...Chapter 16 Port XT...
Страница 350: ...Chapter 17 Port 0...
Страница 361: ...Chapter 18 Port 1...
Страница 368: ...Chapter 19 Port2...
Страница 379: ...Chapter 20 Port 3...
Страница 395: ...Chapter 21 Port 4...
Страница 410: ...Chapter 22 Port 5...
Страница 426: ...Chapter 23 Melody Driver...
Страница 439: ...Chapter 24 RC Oscillation type A D Converter RC ADC...
Страница 462: ...Chapter 25 Successive Approximation Type A D Converter SA ADC...
Страница 479: ...Chapter 26 Analog Comparator...
Страница 489: ...Chapter 27 Flash Memory Control...
Страница 505: ...Chapter 28 Voltage Level Supervisor VLS...
Страница 517: ...Chapter 29 LLD circuit...
Страница 519: ...Chapter 30 On Chip Debug Function...
Страница 522: ...Appendixes...
Страница 552: ...Revision History...