Rev. 1.0, 09/02, page 561 of 568
23.5
Flash Memory Characteristics
Table 23.9 lists the flash memory characteristics.
Table 23.9 Flash Memory Characteristics
Conditions: V
CC
= 4.5 V to 5.5 V, AV
CC
= 4.5 V to 5.5 V,
V
SS
= PLLV
SS
= AV
SS
= 0 V,
T
a
= 0 to +75°C (Programming / erasing operating temperature range)
Item
Symbol
Min
Typ
Max
Unit
Test
Condition
Programming time
*
1,
*
2,
*
4
t
P
10 200
ms/128
bytes
Erase time
*
1,
*
3,
*
5
t
E
100
1200
ms/block
Reprogramming count
N
WEC
100
Times
Programming Wait time after SWE bit setting
*
1
t
sswe
1 1
µs
Wait time after PSU1 bit setting
*
1
t
spsu
50
50
µs
Wait time after P1 bit setting
*
1,
*
4
t
sp30
28
30
32
µs
Programming
time wait
t
sp200
198
200
202
µs
Programming
time wait
t
sp10
8 10
12
µs
Additional-
programming
time wait
Wait time after P1 bit clear
*
1
t
cp
5
5
µs
Wait time after PSU1 bit clear
*
1
t
cpsu
5 5
µs
Wait time after PV1 bit setting
*
1
t
spv
4 4
µs
Wait time after H
′
FF dummy write
*
1
t
spvr
2 2
µs
Wait time after PV1 bit clear
*
1
t
cpv
2 2
µs
Wait time after SWE bit clear
*
1
t
cswe
100
100
µs
Maximum
programming
count
*
1,
*
4
N
1000
Times
Erase
Wait time after SWE bit setting
*
1
t
sswe
1 1
µs
Wait time after ESU1 bit setting
*
1
t
sesu
100
100
µs
Wait time after E1 bit setting
*
1,
*
5
t
se
10
10
100
ms
Erase
time
wait
Wait time after E1 bit clear
*
1
t
ce
10
10
µs
Wait time after ESU1 bit clear
*
1
t
cesu
10
10
µs
Wait time after EV1 bit setting
*
1
t
sev
20
20
µs
Wait time after H
′
FF dummy write
*
1
t
sevr
2 2
µs
Wait time after EV1 bit clear
*
1
t
cev
4 4
µs
Wait time after SWE bit clear
*
1
t
cswe
100
100
µs
Maximum
erase
count
*
1,
*
5
N
12
120
Times
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