Rev. 1.0, 09/02, page 455 of 568
Bit
Bit Name
Initial Value
R/W
Description
2
1
0
RAM2
RAM1
RAM0
0
0
0
R/W
R/W
R/W
Flash Memory Area Selection
Specifies one of the following flash memory areas
to overlap the RAM area of H
′
FFE000 to H
′
FFE3FF
when the RAMS bit is set to 1. The areas
correspond with 1-kbyte erase blocks.
00X: H
′
000000 to H
′
0003FF (EB0)
01X: H
′
000400 to H
′
0007FF (EB1)
10X: H
′
000800 to H
′
000BFF (EB2)
11X: H
′
000C00 to H
′
000FFF (EB3)
Note: X: Don’t care
19.6
On-Board Programming Modes
There are two modes for programming/erasing of the flash memory; boot mode enabling on-board
programming/erasing and programmer mode enabling programming/erasing with a PROM
programmer. On-board programming/erasing can also be performed in user program mode. At
reset-start in reset mode, this LSI changes to a mode depending on the MD pin settings and FWE
pin setting, as shown in table 19.3. The input level of each pin must be defined four states before
the reset ends.
When boot mode is entered, the boot program built into this LSI is initiated. The boot program
transfers the programming control program from the externally-connected host to on-chip RAM
via SCI_2. After erasing the entire flash memory, the programming control program is executed.
This can be used for programming initial values in the on-board state or for a forcible return in
case that programming/erasing cannot be performed in user program mode. In user program mode,
individual blocks can be erased and programmed by branching to the user program/erase control
program prepared by the user.
Table 19.3 Setting On-Board Programming Modes
MD2
MD1
MD0
FWE
LSI State after Reset End
1 1 1 1 User
Mode
0 1 1 1 Boot
Mode
Содержание H8S/2627
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