778
23.7
Flash Memory Characteristics
Table 23-10 shows the flash memory characteristics.
Table 23-10 Flash Memory Characteristics
Conditions: V
CC
= PWMV
CC
= 4.5 V to 5.5 V, LPV
CC
= 4.5 V to 5.5 V, AV
CC
= 4.5 V to 5.5 V,
V
ref
= 4.5 V to AV
CC
, V
SS
PWMV
SS
= PLLV
SS
, AV
SS
= 0 V
T
a
= 0 to +75°C (Programming/erasing operating temperature range: regular
specification)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Programming time
*
1
*
2
*
4
t
P
—
10
200
ms/
128 bytes
Erase time
*
1
*
3
*
5
t
E
—
100
1200
ms/block
Reprogramming count
N
WEC
—
—
100
Times
Programming Wait time after SWE bit setting
*
1
t
sswe
1
1
—
µs
Wait time after PSU bit setting
*
1
t
spsu
50
50
—
µs
Wait time after P bit setting
*
1
*
4
t
sp30
28
30
32
µs
Programming
time wait
t
sp200
198
200
202
µs
Programming
time wait
t
sp10
8
10
12
µs
Additional-
programming
time wait
Wait time after P bit clear
*
1
t
cp
5
5
—
µs
Wait time after PSU bit clear
*
1
t
cpsu
5
5
—
µs
Wait time after PV bit setting
*
1
t
spv
4
4
—
µs
Wait time after H'FF dummy
write
*
1
t
spvr
2
2
—
µs
Wait time after PV bit clear
*
1
t
cpv
2
2
—
µs
Wait time after SWE bit clear
*
1
t
cswe
100
100
—
µs
Maximum programming count
*
1
*
4
N
—
—
1000
Times
Erase
Wait time after SWE bit setting
*
1
t
sswe
1
1
—
µs
Wait time after ESU bit setting
*
1
t
sesu
100
100
—
µs
Wait time after E bit setting
*
1
*
5
t
se
10
10
100
ms
Erase time wait
Wait time after E bit clear
*
1
t
ce
10
10
—
µs
Wait time after ESU bit clear
*
1
t
cesu
10
10
—
µs
Wait time after EV bit setting
*
1
t
sev
20
20
—
µs
Summary of Contents for H8S/2645
Page 4: ......
Page 16: ......
Page 58: ...26 ...
Page 110: ...78 ...
Page 120: ...88 ...
Page 132: ...100 ...
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Page 418: ...386 ...
Page 444: ...412 ...
Page 530: ...498 ...
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Page 642: ...610 ...
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Page 812: ...780 ...
Page 837: ...805 A 2 Instruction Codes Table A 2 shows the instruction codes ...
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