
DocID024597 Rev 5
127/1830
RM0351
Embedded Flash memory (FLASH)
136
3.7.7 Flash
ECC
register (FLASH_ECCR)
Address offset: 0x18
Reset value: 0x0000 0000
Access: no wait state when no Flash memory operation is on going, word, half-word and
byte access
Bit 15
MER2
: Bank 2 Mass erase
This bit triggers the bank 2 mass erase (all bank 2 user pages) when set.
Bits 14:12 Reserved, must be kept at reset value.
Bit 11
BKER
: Page number MSB (Bank selection)
0: Bank 1 is selected for page erase
1: Bank 2 is selected for page erase
Bits 10:3
PNB[7:0]
: Page number selection
These bits select the page to erase:
If BKER = 0:
00000000: page 0
00000001: page 1
...
11111111: page 255
If BKER=1
00000000: page 256
00000001: page 257
...
11111111: page 511
Bit 2
MER1
: Bank 1 Mass erase
This bit triggers the bank 1 mass erase (all bank 1 user pages) when set.
Bit 1
PER
: Page erase
0: page erase disabled
1: page erase enabled
Bit 0
PG
: Programming
0: Flash programming disabled
1: Flash programming enabled
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18
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ECCD
ECCC
Res.
Res.
Res.
Res.
Res.
ECCC
IE
Res.
Res.
Res.
SYSF_
ECC
BK
_ECC
ADDR_ECC[18:16]
rc_w1
rc_w1
rw
r
r
r
r
r
15
14
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10
9
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3
2
1
0
ADDR_ECC[15:0]
r
r
r
r
r
r
r
r
r
r
r
r
r
r
r
r