Rev. 5.00, 12/03, page 844 of 1088
20.4.6
Flash Memory Characteristics
Table 20-38 Flash Memory Characteristics
— Preliminary —
Condition B: V
CC
= 3.0 V to 3.6 V, AV
CC
= 3.0 V to 3.6 V, V
ref
= 3.0 V to AV
CC
, V
SS
= AV
SS
=
0 V, T
a
= 0°C to +75°C (program/erase operating temperature range: regular
specifications), T
a
= 0°C to +85°C (program/erase operating temperature range:
wide-range specifications)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Programming time
*
1
*
2
t
P
—
TBD
TBD
ms/128 bytes
Erase time
*
1
*
3
*
6
t
E
—
TBD
TBD
ms/4 k block
—
TBD
TBD
ms/32 k block
—
TBD
TBD
ms/64 k block
Programming time (total)
*
1
*
2
∑
t
P
—
TBD
TBD
s/512 kbytes
T
a
= 25°C when all
cleared to 0
Erase time (total)
*
1
*
2
∑
t
E
—
TBD
TBD
s/512 kbytes
T
a
= 25
°
C
Programming and erase time
(total)
*
1
*
2
∑
t
PE
—
TBD
TBD
s/512 kbytes
Number of overwrites
NWEC
100
*
3
Times
Data retention time
t
DRP
10
*
4
Years
Notes: 1. The exact programming and erase times depend on the characteristics of the data.
2. Programming and erase times do not include data transfer time.
3. This is the minimum number of rewrites after which all characteristics are guaranteed.
(The guaranteed range is 1 to minimum.)
4. This is the data retention characteristic when the number of rewrites is within the
specification range, including minimum values.
20.4.7
Usage Note (Internal voltage step down for the H8S/2319C F-ZTAT)
The H8S/2319C F-ZTAT has an on-chip voltage step down circuit that automatically lowers the
power supply voltage, inside the microcomputer, to an adequate level. A capacitor (0.1 µF) should
be connected between the internal voltage step down circuit pin (V
CL
pin) and the V
SS
pin to
stabilize the internal voltage. Figure 20.24 shows how to connect the capacitor. Do not connect the
V
CC
power supply to the V
CL
pin. Doing so could permanently damage the LSI. (Connect the V
CC
power-supply to the V
CC
pin, in the usual way.)
Содержание H8S/2318 series
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