Renesas H8S/2318 series, Руководство по оборудованию

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Rev. 5.00, 12/03, page 654 of 1088
CE
A
18
to A
0
Data H'00
OE
WE
Command write
t
wep
t
ceh
t
dh
t
ds
t
f
t
r
t
nxtc
Note: Data is latched at the rising edge of
WE
.
t
ces
Memory read mode
Address stable
Data
Figure 17-52 Memory Read Mode Timing Waveforms after Command Write
Table 17-38 AC Characteristics when Entering Another Mode from Memory Read Mode
(Conditions: V
CC
= 3.3 V ±0.3 V, V
SS
= 0 V, T
a
= 25°C ±5°C)
Item Symbol Min Max Unit
Command write cycle t
nxtc
20 —
µ
s
CE
hold time t
ceh
0 — ns
CE
setup time t
ces
0 — ns
Data hold time t
dh
50 — ns
Data setup time t
ds
50 — ns
Write pulse width t
wep
70 — ns
WE
rise time t
r
— 30 ns
WE
fall time t
f
— 30 ns