Renesas H8S/2318 series, Руководство по оборудованию

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Rev. 5.00, 12/03, page 653 of 1088
Table 17-36 Programmer Mode Commands
1st Cycle 2nd Cycle
Command Name
Number
of Cycles
Mode Address Data Mode Address Data
Memory read mode 1 + n Write X H'00 Read RA Dout
Auto-program mode 129 Write X H'40 Write PA Din
Auto-erase mode 2 Write X H'20 Write X H'20
Status read mode 2 Write X H'71 Write X H'71
Legend:
RA: Read address
PA: Program address
Notes: 1. In auto-program mode, 129 cycles are required for command writing by a simultaneous
128-byte write.
2. In memory read mode, the number of cycles depends on the number of address write
cycles (n).
17.20.4 Memory Read Mode
•
After the end of an auto-program, auto-erase, or status read operation, the command wait state
is entered. To read memory contents, a transition must be made to memory read mode by
means of a command write before the read is executed.
•
Command writes can be performed in memory read mode, just as in the command wait state.
•
Once memory read mode has been entered, consecutive reads can be performed.
•
After power-on, memory read mode is entered.
Table 17-37 AC Characteristics in Memory Read Mode
(Conditions: V
CC
= 3.3 V ±0.3 V, V
SS
= 0 V, T
a
= 25°C ±5°C)
Item Symbol Min Max Unit
Command write cycle t
nxtc
20 —
µ
s
CE
hold time t
ceh
0 — ns
CE
setup time t
ces
0 — ns
Data hold time t
dh
50 — ns
Data setup time t
ds
50 — ns
Write pulse width t
wep
70 — ns
WE
rise time t
r
— 30 ns
WE
fall time t
f
— 30 ns