Rev. 5.00, 12/03, page 833 of 1088
20.3.6
Flash Memory Characteristics
Table 20-28 Flash Memory Characteristics
— Preliminary —
Condition B: V
CC
= 3.0 V to 3.6 V, AV
CC
= 3.0 V to 3.6 V, V
ref
= 3.0 V to AV
CC
, V
SS
= AV
SS
=
0 V, T
a
= 0°C to +75°C (program/erase operating temperature range: regular
specifications), T
a
= 0°C to +85°C (program/erase operating temperature range:
wide-range specifications)
Item
Symbol
Min
Typ
Max
Unit
Test
Conditions
Programming time
*
1
*
2
*
4
t
P
—
10
200
ms/
128 bytes
Erase time
*
1
*
3
*
6
t
E
—
50
1000
ms/block
Rewrite times
NWEC
—
—
100
Times
Programming Wait time after SWE bit setting
*
1
x
1
—
—
µ
s
Wait time after PSU bit setting
*
1
y
50
—
—
µ
s
Wait time after P bit setting
*
1
*
4
z
(z1)
—
—
30
µ
s
1
≤
n
≤
6
(z2)
—
—
200
µ
s
7
≤
n
≤
1000
(z3)
—
—
10
µ
s
Additional-
program-
ming time
wait
Wait time after P bit clearing
*
1
α
5
—
—
µ
s
Wait time after PSU bit clearing
*
1
β
5
—
—
µ
s
Wait time after PV bit setting
*
1
γ
4
—
—
µ
s
Wait time after H'FF dummy write
*
1
ε
2
—
—
µ
s
Wait time after PV bit clearing
*
1
η
2
—
—
µ
s
Wait time after SWE bit clearing
*
1
θ
100
—
—
µ
s
Maximum number of writes
*
1
*
4
N
—
—
1000
*
5
Times
Erasing
Wait time after SWE bit setting
*
1
x
1
—
—
µ
s
Wait time after ESU bit setting
*
1
y
100
—
—
µ
s
Wait time after E bit setting
*
1
*
6
z
—
—
10
µ
s
Wait time after E bit clearing
*
1
α
10
—
—
µ
s
Wait time after ESU bit clearing
*
1
β
10
—
—
µ
s
Wait time after EV bit setting
*
1
γ
20
—
—
µ
s
Wait time after H'FF dummy write
*
1
ε
2
—
—
µ
s
Wait time after EV bit clearing
*
1
η
4
—
—
µ
s
Wait time after SWE bit clearing
*
1
θ
100
—
—
µ
s
Maximum number of erases
*
1
*
6
N
—
—
100
Times
Notes: 1. Follow the program/erase algorithms when making the time settings.
2. Programming time per 128 bytes. (In the H8S/2318, H8S/2317, H8S/2315, and
H8S/2314, indicates the total time during which the P bit in flash memory control
Содержание H8S/2318 series
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