Advanced Operations using the Flash Controller
540
SLAU356I – March 2015 – Revised June 2019
Copyright © 2015–2019, Texas Instruments Incorporated
Flash Controller A (FLCTL_A)
•
Loss of data due to erroneous writes in Full Word Program mode (explained in
)
(PRG_ERR)
•
Completion of an erase operation (ERASE)
•
Completion of a burst read and compare operation (can also stop due to compare mismatch)
(RDBRST)
•
Benchmark counter match event (BMRK)
To generate an interrupt, enable the flash controller interrupt at the NVIC level (see the
NVIC Interrupts
table in the device-specific data sheet) and the required interrupt enable conditions mentioned above.
NOTE:
The flash controller generates an active interrupt for any of the enabled conditions. Software
must process and clear outstanding interrupt flags.
10.3.5 Application Benchmarking Features
The flash controller offers two counters for application benchmarking purposes. These counters are useful
when monitoring the number of flash accesses, primarily because the flash access power is the main
contributor to the overall active power of the device.
•
Instruction fetch benchmark counter (32 bits)
–
Readable or writable by software
–
Increments on each instruction fetch to the flash
•
Data fetch benchmark counter (32 bits)
–
Readable or writable by software
–
Increments on each data fetch to the flash
The flash controller also implements a compare-based interrupt-generation capability. The interrupt
generation logic can be configured to monitor either of the benchmark counters and generate an event
when the counter reaches a particular value.
10.3.6 Support for AM_LF_VCOREx and LPM0_LF_VCOREx Power Modes
The MSP432P4xx family of devices support low-frequency active (AM_LF_VCOREx) and low-frequency
LPM0 (LPM0_LF_VCOREx) modes. In these modes, the device runs in a very-low-frequency low-leakage
mode, with the maximum bus clock frequency restricted to 128 kHz.
When operating in this mode, the flash controller has the following functionality:
•
Reads are carried out in normal read mode only. The read mode setting for both banks is automatically
set to normal read when the flash controller detects the AM_LF_VCOREx or LPM0_LF_VCOREx
modes.
•
Read burst and compare operation is not permitted.
•
Any form of program or erase operation is not permitted.
NOTE:
The application must ensure that only read operations are carried out to the flash when the
device is in low-frequency active or low-frequency LPM0 modes. All other operations are
ignored without generating an exception. If the flash is enabled for full-word write mode, and
an entry to low-frequency active or low-frequency LPM0 mode is initiated, any partially
composed data in the 128-bit write word is discarded without generating an exception.
10.3.7 Flash Functionality During Resets
This section describes the effects of device-level resets on the flash functionality.
10.3.7.1 Soft Reset (Class 3)
A soft reset has no effect on the flash controller functionality.