Rev. 1.0, 09/01, page 791 of 904
φ
V
CC
t
OSC1
Min 0
µ
s
t
MDS
*
3
MD2 to MD0
*
1
RES
SWE bit
SWE set
(1) Boot Mode
(2) User Program Mode
SWE cleared
Programming/
erasing
possible
Wait time: x Wait time: 100
µ
s
Period during which flash memory access is prohibited
(x: Wait time after setting SWE bit)
*
2
Period during which flash memory can be programmed
(Execution of program in flash memory prohibited, and data reads other than verify operations
prohibited)
Notes: 1. Except when switching modes, the level of the mode pins (MD2 to MD0) must be fixed until
power-off by pulling the pins up or down.
2. See section 24.6, Flash Memory Characteristics.
3. Mode programming setup time t
MDS
(min) = 200 ns
SWE set
SWE cleared
φ
V
CC
t
OSC1
MD2 to MD0
*
1
RES
SWE bit
Programming/
erasing
possible
Wait time: x
t
MDS
*
3
Wait time: 100
µ
s
Min 0
µ
s
Figure 20.11 Power-On/Off Timing (H8S/2378R Series)
Содержание H8S/2376 F-ZTAT
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