Rev. 1.0, 09/01, page 176 of 904
T
Rp
ø
T
Rr
,
Software
standby
T
Rc3
(
)
(
)
Note: n = 2 to 5
High
Figure 6.39 Self-Refresh Timing
In some DRAMs provided with a self-refresh mode, the
5$6
signal precharge time immediately
after self-refreshing is longer than the normal precharge time. A setting can be made in bits
TPCS2 to TPCS0 in REFCR to make the precharge time immediately after self-refreshing from 1
to 7 states longer than the normal precharge time. In this case, too, normal precharging is
performed according to the setting of bits TPC1 and TPC0 in DRACCR, and therefore a setting
should be made to give the optimum post-self-refresh precharge time, including this time. Figure
6.40 shows an example of the timing when the precharge time immediately after self-refreshing is
extended by 2 states.
Содержание H8S/2376 F-ZTAT
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