Rev. 1.0, 09/01, page 853 of 904
Table 24.3
DC Characteristics
Conditions: V
CC
= 3.0 V to 3.6 V, AV
CC
= 3.0 V to 3.6 V, V
ref
= 3.0 V to AV
CC
,
V
SS
= AV
SS
= 0 V*
1
, T
a
= –20°C to +75°C (regular specifications),
T
a
= –40°C to +85°C (wide-range specifications)
Item
Symbol
Min
Typ
Max
Unit
Test
Conditions
5(6
|I
in
|
—
—
10.0
µ
A
V
in
= 0.5 to
V
CC
– 0.5 V
67%<
, NMI,
MD2 to MD0
—
—
1.0
µ
A
Input
leakage
current
Port 4, Port 9
—
—
1.0
µ
A
V
in
= 0.5 to
AV
CC
– 0.5 V
Three-state
leakage
current
(off state)
Ports 1 to 3,
P50 to P53,
ports 6 and 8,
ports A to H
| I
TSI
|
—
—
1.0
µ
A
V
in
= 0.5 to
V
CC
– 0.5 V
Input pull-up
MOS current
Ports A to E
–I
p
10
—
300
µ
A
V
CC
= 3.0 to
3.6 V
V
in
= 0 V
5(6
C
in
—
—
30
pF
V
in
= 0 V
NMI
—
—
30
pF
f = 1 MHz
Input
capacitance
All input pins
except
5(6
and NMI
—
—
15
pF
T
a
= 25°C
Normal operation I
CC
*
4
—
TBD
(3.3 V)
TBD
mA
f = 33 MHz
Sleep mode
—
TBD
(3.3 V)
TBD
mA
f = 33 MHz
Standby mode
*
3
—
0.01
10
µ
A
T
a
≤
50°C
—
—
80
µ
A
50°C < T
a
Current
dissipation
*
2
When all module
clocks stop
*
5
—
TBD
—
µ
A
50°C < T
a
During A/D and
D/A conversion
AI
CC
—
TBD
(3.0 V)
TBD
mA
Analog
power
supply
current
Idle
—
TBD
TBD
µ
A
During A/D and
D/A conversion
AI
CC
—
TBD
(3.0 V)
TBD
mA
Reference
power
supply
current
Idle
—
0TBD
TBD
µ
A
RAM standby voltage
V
RAM
2.0
—
—
V
Содержание H8S/2376 F-ZTAT
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