1139
11100B–ATARM–31-Jul-12
SAM4S Series [Preliminary]
Table 42-52. Embedded Flash Wait State VDDCORE set at 1.2V and VDDIO 1.62V to 3.6V @ 85C
FWS
Read Operations
Maximum Operating Frequency (MHz)
0
1 cycle
17
1
2 cycles
34
2
3 cycles
52
3
4 cycles
69
4
5 cycles
87
5
6 cycles
104
6
7 cycles
121
Table 42-53. Embedded Flash Wait State VDDCORE set at 1.20V and VDDIO 2.7V to 3.6V @ 85C
FWS
Read Operations
Maximum Operating Frequency (MHz)
0
1 cycle
21
1
2 cycles
42
2
3 cycles
63
3
4 cycles
84
4
5 cycles
105
5
6 cycles
123
Table 42-54. AC Flash Characteristics
Parameter
Conditions
Min
Typ
Max
Units
Program Cycle Time
Erase page mode
10
50
ms
Erase block mode (by 4Kbytes)
50
200
ms
Erase sector mode
400
950
ms
Full Chip Erase
1 MBytes
512 KBytes
9
5.5
18
11
s
Data Retention
Not Powered or Powered
20
Years
Endurance
Write/Erase cycles per page, block or
sector @ 25°C
Write/Erase cycles per page, block or
sector @ 85°C
10K
100K
cycles
Содержание SAM4S Series
Страница 44: ...44 11100B ATARM 31 Jul 12 SAM4S Series Preliminary ...
Страница 412: ...412 11100B ATARM 31 Jul 12 SAM4S Series Preliminary ...
Страница 1105: ...1105 11100B ATARM 31 Jul 12 SAM4S Series Preliminary ...
Страница 1142: ...1142 11100B ATARM 31 Jul 12 SAM4S Series Preliminary Figure 43 3 100 ball VFBGA Package Drawing ...
Страница 1143: ...1143 11100B ATARM 31 Jul 12 SAM4S Series Preliminary Figure 43 4 64 lead LQFP Package Drawing ...
Страница 1145: ...1145 11100B ATARM 31 Jul 12 SAM4S Series Preliminary Figure 43 5 64 lead QFN Package Drawing ...