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11100B–ATARM–31-Jul-12
SAM4S Series [Preliminary]
Revision History
In the tables that follow, the most recent version of the document appears first.
“rfo” indicates changes requested during document review and approval loop.
Doc. Rev.
11100B
Comments
Change
Request
Ref.
Introduction
48 pins packages (SAM4S16A and SAM4S8A devices) removed.
Write Protected Registers added in
Note related to EWP and EWPL commands added in
Section 8.1.3.1 “Flash Overview” on page 30
.
References to WFE instructions replaced by relevant bits precise descriptions.
Dual bank and cache memory mentioned in
and
Flash and SRAM memory sizes updated in
.
1µA instead of 3 in
and
.
Table titles and sub-section titles updated with new devices.
VFBGA100 package added:
and
added.
Reference to CortexM3 deleted and VDDIO value added in
Section 5.5.1 “Backup Mode” on page 21
.
Entering Wait Mode process updated and current changed from 15 to 32 µA in
Added paragraph detailing mode selection with FLPM value in
Values added and notes updated in
Third paragraph frequency values updated in
SRAM upper address changed to 0x20400000, and EFC1 added in
.
Note added in
Section 8.1.3.1 “Flash Overview” on page 30
.
New devices features added in
Section 8.1.1 “Internal SRAM” on page 30
,
Section 8.1.3.1 “Flash Overview” on
Section 8.1.3.4 “Lock Regions” on page 34
Section 8.1.3.5 “Security Bit Feature” on page 34
8.1.3.11 “GPNVM Bits” on page 35
EEFC replaced by EEFC0 and EEFC1 in
.
‘Cortex M-4’ changed for ‘Cortex-M4’ in block diagrams:
and
.
Section 5.5.4 “Low Power Mode Summary Table”
, updated the list of potential wake up sources for Sleep Mode
in
.
Added references to S16 in the flash size description in
Section 8.1.3.1 “Flash Overview”
, replaced “Time Counter B” by “Time Counter A” in
.
Fixed the section structure for
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CORTEX
FPU related instructions deleted in
Fonts style corrected for instructions code in the whole chapter.
Updated
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RSTC
Updated for dual core.
EXTRST field description updated in
Section 13.5.1 “Reset Controller Control Register” on page 260
.
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RTC
In
Section 15.6.2 “RTC Mode Register” on page 282
, formulas associated with conditions HIGHPPM = 1 and
HIGHPPM = 0 have been swapped, text has been clarified.
In
Section 15.5.7 “RTC Accurate Clock Calibration” on page 277
, paragraph describing RTC clock calibration
circuitry correction updated with mention of crystal drift.
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Содержание SAM4S Series
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Страница 1142: ...1142 11100B ATARM 31 Jul 12 SAM4S Series Preliminary Figure 43 3 100 ball VFBGA Package Drawing ...
Страница 1143: ...1143 11100B ATARM 31 Jul 12 SAM4S Series Preliminary Figure 43 4 64 lead LQFP Package Drawing ...
Страница 1145: ...1145 11100B ATARM 31 Jul 12 SAM4S Series Preliminary Figure 43 5 64 lead QFN Package Drawing ...