Development Support
MC9S08QL8 MCU Series Reference Manual, Rev. 1
232
NXP Semiconductors
Table 16-1. BDC Command Summary
Command
Mnemonic
Active BDM/
Non-intrusive
Coding
Structure
Description
SYNC
Non-intrusive
n/a
1
1
The SYNC command is a special operation that does not have a command code.
Request a timed reference pulse to determine
target BDC communication speed
ACK_ENABLE
Non-intrusive
D5/d
Enable acknowledge protocol. Refer to NXP
document order no. HCS08RMv1/D.
ACK_DISABLE
Non-intrusive
D6/d
Disable acknowledge protocol. Refer to NXP
document order no. HCS08RMv1/D.
BACKGROUND
Non-intrusive
90/d
Enter active background mode if enabled
(ignore if ENBDM bit equals 0)
READ_STATUS
Non-intrusive
E4/SS
Read BDC status from BDCSCR
WRITE_CONTROL
Non-intrusive
C4/CC
Write BDC controls in BDCSCR
READ_BYTE
Non-intrusive
E0/AAAA/d/RD
Read a byte from target memory
READ_BYTE_WS
Non-intrusive
E1/AAAA/d/SS/RD
Read a byte and report status
READ_LAST
Non-intrusive
E8/SS/RD
Re-read byte from address just read and report
status
WRITE_BYTE
Non-intrusive
C0/AAAA/WD/d
Write a byte to target memory
WRITE_BYTE_WS
Non-intrusive
C1/AAAA/WD/d/SS
Write a byte and report status
READ_BKPT
Non-intrusive
E2/RBKP
Read BDCBKPT breakpoint register
WRITE_BKPT
Non-intrusive
C2/WBKP
Write BDCBKPT breakpoint register
GO
Active BDM
08/d
Go to execute the user application program
starting at the address currently in the PC
TRACE1
Active BDM
10/d
Trace 1 user instruction at the address in the
PC, then return to active background mode
TAGGO
Active BDM
18/d
Same as GO but enable external tagging
(HCS08 devices have no external tagging pin)
READ_A
Active BDM
68/d/RD
Read accumulator (A)
READ_CCR
Active BDM
69/d/RD
Read condition code register (CCR)
READ_PC
Active BDM
6B/d/RD16
Read program counter (PC)
READ_HX
Active BDM
6C/d/RD16
Read H and X register pair (H:X)
READ_SP
Active BDM
6F/d/RD16
Read stack pointer (SP)
READ_NEXT
Active BDM
70/d/RD
Increment H:X by one then read memory byte
located at H:X
READ_NEXT_WS
Active BDM
71/d/SS/RD
Increment H:X by one then read memory byte
located at H:X. Report status and data.
WRITE_A
Active BDM
48/WD/d
Write accumulator (A)
WRITE_CCR
Active BDM
49/WD/d
Write condition code register (CCR)
WRITE_PC
Active BDM
4B/WD16/d
Write program counter (PC)
WRITE_HX
Active BDM
4C/WD16/d
Write H and X register pair (H:X)
WRITE_SP
Active BDM
4F/WD16/d
Write stack pointer (SP)
WRITE_NEXT
Active BDM
50/WD/d
Increment H:X by one, then write memory byte
located at H:X
WRITE_NEXT_WS
Active BDM
51/WD/d/SS
Increment H:X by one, then write memory byte
located at H:X. Also report status.
Summary of Contents for MC9S08QL4
Page 4: ...MC9S08QL8 MCU Series Reference Manual Rev 1 4 NXP Semiconductors...
Page 36: ...Chapter 3 Modes of Operation MC9S08QL8 MCU Series Reference Manual Rev 1 36 NXP Semiconductors...
Page 56: ...Chapter 4 Memory MC9S08QL8 MCU Series Reference Manual Rev 1 56 NXP Semiconductors...
Page 172: ...Modulo Timer S08MTIMV1 MC9S08QL8 MCU Series Reference Manual Rev 1 172 NXP Semiconductors...
Page 238: ...Development Support MC9S08QL8 MCU Series Reference Manual Rev 1 238 NXP Semiconductors...
Page 239: ......