Samsung SC32442B54, Руководство пользователя

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K5D2G13ACM-D075
Revision 1.0
December 2006
47
MCP MEMORY
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= -25 to 85
°
C)
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Internal TCSR can be supported.
Temp : 45
°
C/Max 85
°
C.
4. It has +/-5
°
C tolerance.
5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
Parameter Symbol Test Condition 133Mhz@CL3 Unit Note
Operating Current
(One Bank Active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
90 mA 1
Precharge Standby Current
in power-down mode
I
CC2
P CKE
≤
V
IL
(max), t
CC
= 10ns 0.3
mA
I
CC2
PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
0.3
Precharge Standby Current
in non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
10
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
1
Active Standby Current
in power-down mode
I
CC3
P CKE
≤
V
IL
(max), t
CC
= 10ns 6
mA
I
CC3
PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
3
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
25 mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
15 mA
Operating Current
(Burst Mode)
I
CC
4
I
O
= 0 mA
Page burst
4Banks Activated
t
CCD
= 2CLKs
100 mA 1
Refresh Current I
CC
5 t
ARFC
≥
t
ARFC
(min) 150 mA 2
Self Refresh Current I
CC
6 CKE
≤
0.2V
Internal TCSR
45
*4 85
°
C 3
Full Array 250 500
uA
1/2 Array 220 400
1/4 Array 205 350