Samsung SC32442B54, Руководство пользователя

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K5D2G13ACM-D075
Revision 1.0
December 2006
12
MCP MEMORY
AC Timing Characteristics for Command / Address / Data Input
NOTES : 1. The transition of the corresponding control pins must occur only once while WE is held low
2. tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle
Parameter Symbol Min Max Unit
CLE Setup Time t
CLS
(1) 25 - ns
CLE Hold Time t
CLH
10 - ns
CE Setup Time
t
CS
(1) 35 - ns
CE Hold Time t
CH
10 - ns
WE Pulse Width t
WP
25 - ns
ALE Setup Time t
ALS
(1) 25 - ns
ALE Hold Time t
ALH
10 - ns
Data Setup Time t
DS
(1) 20 - ns
Data Hold Time t
DH
10 - ns
Write Cycle Time t
WC
45 - ns
WE High Hold Time t
WH
15 - ns
Address to Data Loading Time t
ADL
(2) 100 - ns
Program / Erase Characteristics
NOTE : 1. Typical value is measured at Vcc=3.3V, T
A
=25
°
C. Not 100% tested.
2. Typical program time is defined as the time within which more than 50% of the whole pages are programmed at 3.3V Vcc and 25
°
C temperature
.
Parameter Symbol Min Typ Max Unit
Program Time t
PROG
- 200 700
µ
s
Dummy Busy Time for Two-Plane Page Program t
DBSY
- 0.5 1
µ
s
Number of Partial Program Cycles Nop - - 4 cycles
Block Erase Time t
BERS
- 1.5 2 ms