K5D2G13ACM-D075
Revision 1.0
December 2006
34
MCP MEMORY
Figure 7. Random Data Output In a Page
Address
00h
Data Output
R/B
RE
t
R
30h
Address
05h
E0h
5Cycles
2Cycles
Data Output
Data Field
Spare Field
Data Field
Spare Field
I/Ox
Col. Add.1,2 & Row Add.1,2,3
PAGE PROGRAM
The device is programmed basically on a page basis, but it does allow multiple partial page programming of a word or consecutive
bytes up to 2,112, in a single page program cycle. The number of consecutive partial page programming operation within the same
page without an intervening erase operation must not exceed 4 times for a single page. The addressing should be done in sequential
order in a block. A page program cycle consists of a serial data loading period in which up to 2,112bytes of data may be loaded into
the data register, followed by a non-volatile programming period where the loaded data is programmed into the appropriate cell.
The serial data loading period begins by inputting the Serial Data Input command(80h), followed by the five cycle address inputs and
then serial data loading. The words other than those to be programmed do not need to be loaded. The device supports random data
input in a page. The column address for the next data, which will be entered, may be changed to the address which follows random
data input command(85h). Random data input may be operated multiple times regardless of how many times it is done in a page.
Modifying the data of a sector by Random Data Input before Copy-Back Program must be performed for the whole sector
and is allowed only once per each sector. Any partial modification smaller than a sector corrupts the on-chip EDC codes.
The Page Program confirm command(10h) initiates the programming process. Writing 10h alone without previously entering the
serial data will not initiate the programming process. The internal write state controller automatically executes the algorithms and tim-
ings necessary for program and verify, thereby freeing the system controller for other tasks. Once the program process starts, the
Read Status Register command may be entered to read the status register. The system controller can detect the completion of a pro-
gram cycle by monitoring the R/B output, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset
command are valid while programming is in progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be
checked(Figure 8). The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command
register remains in Read Status command mode until another valid command is written to the command register.
Figure 8. Program & Read Status Operation
80h
R/B
Address & Data Input
I/O0
Pass
Data
10h
70h
Fail
t
PROG
I/Ox
Col. Add.1,2 & Row Add.1,2,3
"0"
"1"
Col. Add.1,2
Содержание SC32442B54
Страница 1: ...SC32442B54 USER S MANUAL Revision 1 0 ...
Страница 43: ...PRODUCT OVERVIEW SC32442B RISC MICROPROCESSOR 1 42 NOTES ...
Страница 59: ...PROGRAMMER S MODEL SC32442B RISC MICROPROCESSOR 2 16 NOTES ...
Страница 123: ...ARM INSTRUCTION SET SC32442B RISC MICROPROCESSOR 3 64 NOTES ...
Страница 167: ...THUMB INSTRUCTION SET SC32442B RISC MICROPROCESSOR 4 44 NOTES ...
Страница 187: ...MEMORY CONTROLLER SC32442B RISC MICROPROCESSOR 5 20 NOTES ...
Страница 250: ...DMA SC32442B RISC MICROPROCESSOR 8 14 NOTES ...
Страница 308: ...PWM TIMER SC32442B RISC MICROPROCESSOR 10 20 NOTES ...
Страница 330: ...UART SC32442B RISC MICROPROCESSOR 11 22 NOTES ...
Страница 417: ...SC32442B RISC MICROPROCESSOR LCD CONTROLLER 15 45 NOTES ...
Страница 427: ...ADC AND TOUCH SCREEN INTERFACE SC32442B RISC MICROPROCESSOR 16 10 NOTES ...
Страница 511: ...BUS PRIORITIES SC32442B RISC MICROPROCESSOR 24 2 NOTES ...
Страница 562: ...K5D2G13ACM D075 Revision 1 0 December 2006 7 MCP MEMORY 2Gb 256Mb x8 NAND Flash Memory A Die ...
Страница 599: ...K5D2G13ACM D075 Revision 1 0 December 2006 44 MCP MEMORY 512Mb 16Mb x32 Mobile SDRAM C Die ...