Samsung SC32442B54, Руководство пользователя

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K5D2G13ACM-D075
Revision 1.0
December 2006
46
MCP MEMORY
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= -25 to 85
°
C)
NOTES :
1. Under all conditions, VDDQ must be less than or equal to VDD.
2. VIH (max) = 2.2V AC.The overshoot voltage duration is
≤
3ns.
3. VIL (min) = -1.0V AC. The undershoot voltage duration is
≤
3ns.
4. Any input 0V
≤
VIN
≤
VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.
4. Dout is disabled, 0V
≤
VOUT
≤
VDDQ.
Parameter Symbol Min Typ Max Unit Note
Supply voltage
V
DD
1.7 1.8 1.95 V 1
V
DDQ
1.7 1.8 1.95 V 1
Input logic high voltage V
IH
0.8 x V
DDQ
1.8 V
DDQ
+ 0.3 V 2
Input logic low voltage V
IL
-0.3 0 0.3 V 3
Output logic high voltage V
OH
V
DDQ
-0.2 - - V I
OH
= -0.1mA
Output logic low voltage V
OL
- - 0.2 V I
OL
= 0.1mA
Input leakage current I
LI
-2 - 2 uA 4
CAPACITANCE
(V
DD
= 1.8V, T
A
= 23
°
C, f = 1MHz, V
REF
=0.9V
±
50 mV)
Pin Symbol Min Max Unit Note
Clock C
CLK
1.5 3.5 pF
RAS, CAS, WE, CS, CKE C
IN
1.5 3.0 pF
DQM C
IN
1.5 3.0 pF
Address C
ADD
1.5 3.0 pF
DQ
0
~ DQ
31
C
OUT
2.0 4.5 pF
ABSOLUTE MAXIMUM RATINGS
NOTES:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Parameter Symbol Value Unit
Voltage on any pin relative to V
ss
V
IN
, V
OUT
-1.0 ~ 2.6 V
Voltage on V
DD
supply relative to V
ss
V
DD
, V
DDQ
-1.0 ~ 2.6 V
Storage temperature T
STG
-55 ~ +150
°
C
Power dissipation P
D
1.0 W
Short circuit current I
OS
50 mA