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Gas injection
system
If the workstation is equipped with a gas injection system (GIS), up to
five
different precursors out
of the following can be available:
Using the GIS for any other purpose is not allowed and could be hazardous.
Likewise, it is not allowed to use the GIS in combination with any other precursor not mentioned
in table 2.1.
For safety reasons, mixing of precursors is not possible due to technical measures.
Reactive product
Precursor
Used for
Tungsten
W(CO)
6
Tungsten hexacarbonyl
deposition
Platinum
C
9
H
16
Pt
Methylcyclopentadienyl(trimethyl)platinum (IV)
deposition
Silicon dioxide
(insulator)
C
12
H
24
O
6
Si
Diacetoxydi-t-butoxysilane
deposition
Carbon
C
14
H
10
Phenanthrene
deposition
Gold
Dimethyl(acetylacetonate)gold(III)
deposition
Fluorine
XeF
2
Xenondifluoride
gas assisted etching,
selectively etches Si, SiO
x
Water (reactive pro-
duct)
MgSO
4 *
7 H
2
O
Magnesium sulphate heptahydrate
gas assisted etching
selectively etches hydrocarbon
Iodine
I
2
gas assisted etching,
selectively etches aluminum/
aluminum oxide
Table 2.1: Overview of available precursors
Summary of Contents for AURIGA Compact Crossbeam
Page 1: ...AURIGA Compact Crossbeam workstation Instruction Manual ...
Page 50: ...RM çÑ NSQ fåëíêìÅíáçå j åì ä ìêáÖ çãé Åí ÉåMP PK aÉëÅêáéíáçå ìëíçãÉê ëÉêîáÅÉ ...
Page 54: ...RQ çÑ NSQ fåëíêìÅíáçå j åì ä ìêáÖ çãé Åí ÉåMP RK fåëí ää íáçå ...
Page 150: ...NRM çÑ NSQ fåëíêìÅíáçå j åì ä ìêáÖ çãé Åí ÉåMP UK qêçìÄäÉëÜççíáåÖ mçïÉê ÅáêÅìáí ...
Page 156: ...NRS çÑ NSQ fåëíêìÅíáçå j åì ä ìêáÖ çãé Åí ÉåMP NNK ÄÄêÉîá íáçåë ...
Page 160: ...NSM çÑ NSQ fåëíêìÅíáçå j åì ä ìêáÖ çãé Åí ÉåMP NPK aÉÅä ê íáçå çÑ ÅçåÑçêãáíó ...