CHAPTER 23 ELECTRICAL SPECIFICATIONS (TARGET)
Preliminary User’s Manual U16846EJ1V0UD
383
Flash Memory Programming Characteristics
(T
A
= +10 to +65
°
C, 2.7 V
≤
V
DD
≤
5.5 V, 2.7 V
≤
AV
REF
≤
V
DD
, V
SS
= 0 V)
(1) Basic
characteristics
Parameter Symbol
Conditions
MIN.
TYP.
MAX.
Unit
V
DD
supply current
I
DD
f
X
= 10 MHz, V
DD
= 5.5 V
T.B.D.
mA
Chip unit
T
erac
T.B.D. T.B.D. T.B.D. ms
Step erase time
Sector unit
T
eras
T.B.D. T.B.D. T.B.D. ms
Chip unit
T
eraca
25.5
Note 2
ms
Erase time
Note 1
Sector unit
T
erasa
25.5
Note 2
ms
Step write time
T
wrw
T.B.D. T.B.D. T.B.D.
µ
s
Write time
T
wrwa
500
Note 2
µ
s
Number of rewrites per chip
C
erwr
1 erase + 1 write after erase = 1 rewrite
Note 3
100
Note 2
Times
Notes 1.
The prewrite time before erasure and the erase verify time (writeback time) are not included.
2.
These values may change after evaluation.
3. When a product is first written after shipment, “erase
→
write” and “write only” are both taken as one
rewrite.
(2) Serial write operation characteristics
Parameter Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Time from RESET
↑
to FLMD0
count start
T
RFCF
2
19
/f
X
+
α
µ
s
Count execution time
T
COUNT
10
ms
FLMD0 counter high-/low-level
width
T
CH
/T
CL
T.B.D
µ
s
FLMD0 counter rise/fall time
T
R
/T
F
T.B.D
µ
s
Serial Write Operation
RESET
FLMD0
FLMD1
V
DD
0 V
V
DD
0 V
V
DD
0 V
T
RFCF
T
CL
T
F
T
R
T
COUNT
T
CH
