Rev. 1.0, 09/02, page 562 of 568
Notes: 1. Make each time setting in accordance with the program/program-verify flowchart or
erase/erase-verify flowchart.
2. Programming time per 128 bytes (shows the total period for which the P1 bit in the
flash memory control register (FLMCR1) is set. It does not include the programming
verification time.)
3. Block erase time (shows the total period for which the E1-bit FLMCR1 is set. It does
not include the erase verification time.)
4. To specify the maximum programming time value (tp (max)) in the 128-bytes
programming algorithm, set the max. value (1000) for the maximum programming
count (n).
The wait time after P1 bit setting should be changed as follows according to the value
of the programming counter (n).
Programming counter (n) = 1 to 6:
t
sp30
= 30
µ
s
Programming counter (n) = 7 to 1000:
t
sp200
= 200
µ
s
[In additional programming]
Programming counter (n) = 1 to 6:
t
sp10
= 10
µ
s
5. For the maximum erase time (t
E
(max)), the following relationship applies between the
wait time after E1 bit setting (t
se
) and the maximum erase count (N):
t
E
(max) = Wait time after E1 bit setting (t
se
) x maximum erase count (N)
To set the maximum erase time, the values of (t
se
) and (N) should be set so as to
satisfy the above formula.
Examples: When t
se
= 100 ms, N = 12 times
When
t
se
= 10 ms, N = 120 times
Summary of Contents for H8S/2627
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