CHAPTER 15 FLASH MEMORY (
µ
PD70F3114)
615
User’s Manual U15195EJ5V0UD
15.7.2 Self-programming function
The
µ
PD70F3114 provides self-programming functions, as shown in Table 15-7. By combining these functions,
erasing/writing flash memory becomes possible.
Table 15-7. Function List
Type Function
Name
Function
Erase
Area erase
Erases the specified area.
Continuous write in word units
Continuously writes the specified memory contents from
the specified flash memory address, for the number of
words specified in 4-byte units.
Write
Pre-write
Writes 0 to flash memory before erasure.
Erase verify
Checks whether an over erase occurred after erasure.
Erase byte verify
Checks whether erasure is complete.
Check
Internal verify
Checks whether the signal level of the post-write data in
flash memory is appropriate.
Write back
Area write back
Writes back the flash memory area in which an over
erase occurred.
Acquire information
Flash memory information read
Reads out information about flash memory.
15.7.3 Outline of self-programming interface
To execute self-programming using the self-programming interface, the environmental conditions of the hardware
and software for manipulating the flash memory must be satisfied.
It is assumed that the self-programming interface is used in an assembly language.
(1) Entry program
This program is to call the internal processing of the device.
It is a part of the application program, and must be executed in memory other than the block 0 space and
internal ROM area (flash memory).
(2) Device internal processing
This is manipulation of the flash memory executed inside the device.
This processing manipulates the flash memory after it has been called by the entry program.
(3) RAM parameter
This is a RAM area to which the parameters necessary for self-programming, such as write time and erase
time, are written. It is set by the application program and referenced by the device internal processing.
Содержание PD703114
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