A96G140/A96G148/A96A148 User’s manual
19. Memory programming
239
FETCR (Flash Time control Register): 1023H
7
6
5
4
3
2
1
0
TCR7
TCR6
TCR5
TCR4
TCR3
TCR2
TCR1
TCR0
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
Initial value: 00H
TCR[7:0]
Flash Time control
Program and erase time is controlled by setting FETCR register. Program and erase timer uses 10-bit
counter. It increases by one at each RING clock frequency (f
LSIRC
=128KHz).
It is cleared when program or erase starts. Timer stops when 10-bit counter is same to FETCR. PEVBSY
is cleared when program, erase or verify starts and set when program, erase or verify stops.
Max program/erase time at INTRC/256 clock : (255+1) * 2 * (7.8125us) = 4.0ms
In the case of
±
10
% of error rate of counter source clock, program or erase time is 3.6~4.4ms
* Program/erase time calculation
For page write or erase = Tpe = (TCON+1) * 2 * (f
LSIRC
)
For bulk erase, Tbe = (TCON+1) * 4 * (f
LSIRC
)
Recommended bulk erase time :
FETCR = 57h
Recommended program / page erase time :
FETCR = AFh
Table 45. Program and Erase Time
Min
Typ
Max
Unit
Program/erase time
2.4
2.5
2.6
Ms
19.2
Memory map
19.2.1
Flash memory map
Program memory uses 64K bytes of flash memory. It is read by byte and written by byte or page. One
page is 64-bytes